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Results: 1-10 |
Results: 10
Investigation of strain-modulated InGaAs nanostructures by grazing-incidence x-ray diffraction and photoluminescence
Authors: Zeimer, U Grenzer, J Pietsch, U Gramlich, S Bugge, F Smirnitzki, V Weyers, M Trankle, G
Citation: U. Zeimer et al., Investigation of strain-modulated InGaAs nanostructures by grazing-incidence x-ray diffraction and photoluminescence, J PHYS D, 34(10A), 2001, pp. A183-A187
Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence
Authors: Gramlich, S Nebauer, E Sebastian, J Beister, G
Citation: S. Gramlich et al., Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence, ELECTR LETT, 37(7), 2001, pp. 463-464
12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells
Authors: Bugge, F Erbert, G Fricke, J Gramlich, S Staske, R Wenzel, H Zeimer, U Weyers, M
Citation: F. Bugge et al., 12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells, APPL PHYS L, 79(13), 2001, pp. 1965-1967
Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy
Authors: Zeimer, U Bugge, F Gramlich, S Smirnitski, V Weyers, M Trankle, G Grenzer, J Pietsch, U Cassabois, G Emiliani, V Lienau, C
Citation: U. Zeimer et al., Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy, APPL PHYS L, 79(11), 2001, pp. 1611-1613
MOVPE growth of AlGaAs/GaInP diode lasers
Authors: Bugge, F Knauer, A Gramlich, S Rechenberg, I Beister, G Sebastian, J Wenzel, H Erbert, G Weyers, M
Citation: F. Bugge et al., MOVPE growth of AlGaAs/GaInP diode lasers, J ELEC MAT, 29(1), 2000, pp. 57-61
Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm
Authors: Bugge, F Zeimer, U Gramlich, S Rechenberg, I Sebastian, J Erbert, G Weyers, M
Citation: F. Bugge et al., Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm, J CRYST GR, 221, 2000, pp. 496-502
Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistors
Authors: Richter, E Brunner, F Gramlich, S Hahle, S Mai, M Zeimer, U Weyers, M
Citation: E. Richter et al., Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistors, MAT SCI E B, 66(1-3), 1999, pp. 162-173
Exciton absorption in beta-FeSi2 epitaxial films
Authors: Rebien, M Henrion, W Muller, U Gramlich, S
Citation: M. Rebien et al., Exciton absorption in beta-FeSi2 epitaxial films, APPL PHYS L, 74(7), 1999, pp. 970-972
Analysis of Bragg reflectors by lateral photoluminescence spectroscopy
Authors: Gramlich, S Sebastian, J Weyers, M
Citation: S. Gramlich et al., Analysis of Bragg reflectors by lateral photoluminescence spectroscopy, MATER SCI T, 14(12), 1998, pp. 1314-1316
Ordering in GaxIn1-xAsyP1-y grown on GaAs by metalorganic vapour-phase epitaxy
Authors: Knauer, A Oelgart, G Oster, A Gramlich, S Bugge, F Weyers, M
Citation: A. Knauer et al., Ordering in GaxIn1-xAsyP1-y grown on GaAs by metalorganic vapour-phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 694-699
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