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Citation: Qy. Chen et al., The structure and electrochemical behavior of nitrogen-containing nanocrystalline diamond films deposited from CH4/N-2/Ar mixtures, J ELCHEM SO, 148(1), 2001, pp. E44-E51
Authors:
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Citation: Am. Dhote et al., Studies of thin film growth and oxidation processes for conductive Ti-Al diffusion barrier layers via in situ surface sensitive analytical techniques, APPL PHYS L, 79(6), 2001, pp. 800-802
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Citation: O. Auciello et al., Studies of ferroelectric heterostructure thin films and interfaces, via insitu analytical techniques, INTEGR FERR, 29(1-2), 2000, pp. 1-12
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Citation: B. Fausett et al., The electrochemical properties of nanocrystalline diamond thin-films deposited from C-60/argon and methane/nitrogen gas mixtures, ELECTROANAL, 12(1), 2000, pp. 7-15
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Citation: O. Auciello et al., Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques, INTEGR FERR, 27(1-4), 1999, pp. 1147-1162
Authors:
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Citation: Vs. Smentkowski et al., Novel reflectron time of flight analyzer for surface analysis using secondary ion mass spectroscopy and mass spectroscopy of recoiled ions, J VAC SCI A, 17(5), 1999, pp. 2634-2641
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Citation: O. Auciello et al., Demonstration of Li-based alloy coatings as low-voltage stable electron-emission surfaces for field-emission devices, J APPL PHYS, 85(12), 1999, pp. 8405-8409
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Citation: J. Im et al., Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors, APPL PHYS L, 74(8), 1999, pp. 1162-1164