Authors:
Santucci, S
Guerrieri, S
Passacantando, M
Picozzi, P
Fama, F
Nardi, N
Basile, F
Citation: S. Santucci et al., Effects of rapid thermal treatments on the electrical properties of thin SiO2 gate oxide for DRAM p-channel MOS transistors, J NON-CRYST, 280(1-3), 2001, pp. 54-58
Authors:
Rachidi, F
Janischewskyj, W
Hussein, AM
Nucci, CA
Guerrieri, S
Kordi, B
Chang, JS
Citation: F. Rachidi et al., Current and electromagnetic field associated with lightning-return strokesto tall towers, IEEE ELMAGN, 43(3), 2001, pp. 356-367
Authors:
Nucci, CA
Guerrieri, S
de Barros, MTC
Rachidi, F
Citation: Ca. Nucci et al., Influence of corona on the voltages induced by nearby lightning on overhead distribution lines, IEEE POW D, 15(4), 2000, pp. 1265-1273