Citation: Mc. Hersam et al., Atomic-level study of the robustness of the Si(100)-2x1 : H surface following exposure to ambient conditions, APPL PHYS L, 78(7), 2001, pp. 886-888
Authors:
Hersam, MC
Lee, J
Guisinger, NP
Lyding, JW
Citation: Mc. Hersam et al., Implications of atomic-level manipulation on the Si(100) surface: From enhanced CMOS reliability to molecular nanoelectronics, SUPERLATT M, 27(5-6), 2000, pp. 583-591
Citation: Mc. Hersam et al., Isolating, imaging, and electrically characterizing individual organic molecules on the Si(100) surface with the scanning tunneling microscope, J VAC SCI A, 18(4), 2000, pp. 1349-1353