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Results: 1-10 |
Results: 10
POTENTIAL-ENERGY OF 2 STRUCTURES OF SIGMA = 11(011) TILT GRAIN-BOUNDARY IN SILICON AND GERMANIUM WITH EMPIRICAL POTENTIALS AND TIGHT-BINDING METHODS
Authors: CHEN J LEBOUVIER B HAIRIE A NOUET G PAUMIER E
Citation: J. Chen et al., POTENTIAL-ENERGY OF 2 STRUCTURES OF SIGMA = 11(011) TILT GRAIN-BOUNDARY IN SILICON AND GERMANIUM WITH EMPIRICAL POTENTIALS AND TIGHT-BINDING METHODS, Computational materials science, 10(1-4), 1998, pp. 334-338
COMPARISON OF 2 O(N) METHODS FOR TOTAL-ENERGY SEMIEMPIRICAL TIGHT-BINDING CALCULATION
Authors: CHEN J BERE A HAIRIE A NOUET G PAUMIER E
Citation: J. Chen et al., COMPARISON OF 2 O(N) METHODS FOR TOTAL-ENERGY SEMIEMPIRICAL TIGHT-BINDING CALCULATION, Computational materials science, 10(1-4), 1998, pp. 392-394
THE VOLUME EXPANSION OF THE (11(2)OVER-BAR-0) PLANAR DEFECT IN 2H-GAN6H-SIC(0001)(SI) GROWN BY MBE/
Authors: VERMAUT P BERE A RUTERANA P NOUET G HAIRIE A PAUMIER E
Citation: P. Vermaut et al., THE VOLUME EXPANSION OF THE (11(2)OVER-BAR-0) PLANAR DEFECT IN 2H-GAN6H-SIC(0001)(SI) GROWN BY MBE/, Thin solid films, 319(1-2), 1998, pp. 153-156
PRECIPITATION OF BETA-SIC IN SI1-YCY ALLOYS
Authors: GUEDJ C DASHIELL MW KULIK L KOLODZEY J HAIRIE A
Citation: C. Guedj et al., PRECIPITATION OF BETA-SIC IN SI1-YCY ALLOYS, Journal of applied physics, 84(8), 1998, pp. 4631-4633
CARBON SELF-ORGANIZATION IN THE TERNARY SI1-X-YGEXCY ALLOY
Authors: GUEDJ C PORTIER X HAIRIE A BOUCHIER D CALVARIN G PIRIOU B GAUTIER B DUPUY JC
Citation: C. Guedj et al., CARBON SELF-ORGANIZATION IN THE TERNARY SI1-X-YGEXCY ALLOY, Journal of applied physics, 83(10), 1998, pp. 5251-5257
METHODS OF MINIMIZING FREE-ENERGIES DIRECTLY
Authors: SUTTON AP HAIRIE A HAIRIE F LEBOUVIER B NOUET G PAUMIER E RALANTOSON N
Citation: Ap. Sutton et al., METHODS OF MINIMIZING FREE-ENERGIES DIRECTLY, Journal of phase equilibria, 18(6), 1997, pp. 544-545
CARBON AND GERMANIUM DISTRIBUTIONS IN SI1-X-YGEXCY LAYERS EPITAXIALLYGROWN ON SI(001) BY RTCVD
Authors: GUEDJ C PORTIER X HAIRIE A BOUCHIER D CALVARIN G PIRIOU B
Citation: C. Guedj et al., CARBON AND GERMANIUM DISTRIBUTIONS IN SI1-X-YGEXCY LAYERS EPITAXIALLYGROWN ON SI(001) BY RTCVD, Thin solid films, 294(1-2), 1997, pp. 129-132
ANALYSIS AND PREDICTION OF RADIOELEMENT D ISPERSION IN THE MARINE-ENVIRONMENT BY THE PULSE RESPONSE METHOD
Authors: BOUST D HAIRIE A FRAIZIER A BARON Y
Citation: D. Boust et al., ANALYSIS AND PREDICTION OF RADIOELEMENT D ISPERSION IN THE MARINE-ENVIRONMENT BY THE PULSE RESPONSE METHOD, Oceanologica acta, 18(6), 1995, pp. 617-629
HIGH-RESISTIVITY BISMUTH PRODUCED BY HEAVY-ION IRRADIATIONS IN THE ELECTRONIC STOPPING POWER REGIME
Authors: PAUMIER E AUDOUARD A BEUNEU F DUFOUR C DURAL J GIRARD JP HAIRIE A LEVALOIS M METZNER MN TOULEMONDE M
Citation: E. Paumier et al., HIGH-RESISTIVITY BISMUTH PRODUCED BY HEAVY-ION IRRADIATIONS IN THE ELECTRONIC STOPPING POWER REGIME, Radiation effects and defects in solids, 126(1-4), 1993, pp. 181-184
STUDY OF AN ANDERSON NEGATIVE - U SYSTEM BY MEANS OF HALL-MOBILITY MEASUREMENTS IN SILICON
Authors: BOGDANSKI P CARIN R CRUEGE F HAIRIE A MADELON R METZNER MN
Citation: P. Bogdanski et al., STUDY OF AN ANDERSON NEGATIVE - U SYSTEM BY MEANS OF HALL-MOBILITY MEASUREMENTS IN SILICON, Radiation effects and defects in solids, 126(1-4), 1993, pp. 261-264
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