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Results: 1-25 | 26-42
Results: 1-25/42
BIEXCITONIC EFFECTS IN THE NONPERTURBATIVE REGIME OF SEMICONDUCTOR MICROCAVITIES
Authors: FAN XD WANG HL HOU HQ HAMMONS BE
Citation: Xd. Fan et al., BIEXCITONIC EFFECTS IN THE NONPERTURBATIVE REGIME OF SEMICONDUCTOR MICROCAVITIES, Physical review. B, Condensed matter, 57(16), 1998, pp. 9451-9454
COHERENT DYNAMICS OF EXCITONIC NONLINEAR-OPTICAL RESPONSE IN THE NONPERTURBATIVE REGIME
Authors: WANG HL HOU HQ HAMMONS BE
Citation: Hl. Wang et al., COHERENT DYNAMICS OF EXCITONIC NONLINEAR-OPTICAL RESPONSE IN THE NONPERTURBATIVE REGIME, Physical review letters, 81(15), 1998, pp. 3255-3258
SHORT-WAVELENGTH BOTTOM-EMITTING VERTICAL-CAVITY LASERS FABRICATED USING WAFER BONDING
Authors: CHOQUETTE KD GEIB KM ROBERDS B HOU HQ TWESTEN RD HAMMONS BE
Citation: Kd. Choquette et al., SHORT-WAVELENGTH BOTTOM-EMITTING VERTICAL-CAVITY LASERS FABRICATED USING WAFER BONDING, Electronics Letters, 34(14), 1998, pp. 1404-1405
LEAKY MODE VERTICAL-CAVITY LASERS USING CAVITY RESONANCE MODIFICATION
Authors: CHOQUETTE KD HADLEY GR HOU HQ GEIB KM HAMMONS BE
Citation: Kd. Choquette et al., LEAKY MODE VERTICAL-CAVITY LASERS USING CAVITY RESONANCE MODIFICATION, Electronics Letters, 34(10), 1998, pp. 991-993
GROWTH OF INGAAS MULTIQUANTUM WELLS AT 1.3 MU-M WAVELENGTH ON GAAS COMPLIANT SUBSTRATES
Authors: ZHU ZH ZHOU R EJECKAM FE ZHANG Z ZHANG J GREENBERG J LO YH HOU HQ HAMMONS BE
Citation: Zh. Zhu et al., GROWTH OF INGAAS MULTIQUANTUM WELLS AT 1.3 MU-M WAVELENGTH ON GAAS COMPLIANT SUBSTRATES, Applied physics letters, 72(20), 1998, pp. 2598-2600
ADVANCES IN SELECTIVE WET OXIDATION OF ALGAAS ALLOYS
Authors: CHOQUETTE KD GEIB KM ASHBY CIH TWESTEN RD BLUM O HOU HQ FOLLSTAEDT DM HAMMONS BE MATHES D HULL R
Citation: Kd. Choquette et al., ADVANCES IN SELECTIVE WET OXIDATION OF ALGAAS ALLOYS, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 916-926
LASER-EMISSION FROM SEMICONDUCTOR MICROCAVITIES - THE ROLE OF CAVITY POLARITONS
Authors: FAN XD WANG HL HOU HQ HAMMONS BE
Citation: Xd. Fan et al., LASER-EMISSION FROM SEMICONDUCTOR MICROCAVITIES - THE ROLE OF CAVITY POLARITONS, Physical review. A, 56(4), 1997, pp. 3233-3236
HIGH-PERFORMANCE 1.06-MU-M SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH INGAAS-GAASP STRAIN-COMPENSATED QUANTUM-WELLS
Authors: HOU HQ CHOQUETTE KD GEIB KM HAMMONS BE
Citation: Hq. Hou et al., HIGH-PERFORMANCE 1.06-MU-M SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH INGAAS-GAASP STRAIN-COMPENSATED QUANTUM-WELLS, IEEE photonics technology letters, 9(8), 1997, pp. 1057-1059
MONOLITHIC, MULTIPLE-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAYS BY SURFACE-CONTROLLED MOCVD GROWTH-RATE ENHANCEMENT AND REDUCTION
Authors: ORTIZ GG LUONG SQ SUN SZ CHENG JL HOU HQ VAWTER GA HAMMONS BE
Citation: Gg. Ortiz et al., MONOLITHIC, MULTIPLE-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAYS BY SURFACE-CONTROLLED MOCVD GROWTH-RATE ENHANCEMENT AND REDUCTION, IEEE photonics technology letters, 9(8), 1997, pp. 1069-1071
LOW-THRESHOLD PROTON-IMPLANTED 1.3-MU-M VERTICAL-CAVITY TOP-SURFACE-EMITTING LASERS WITH DIELECTRIC AND WAFER-BONDED GAAS-ALAS BRAGG MIRRORS
Authors: QIAN Y ZHU ZH LO YH HUFFAKER DL DEPPE DG HOU HQ HAMMONS BE LIN W TU YK
Citation: Y. Qian et al., LOW-THRESHOLD PROTON-IMPLANTED 1.3-MU-M VERTICAL-CAVITY TOP-SURFACE-EMITTING LASERS WITH DIELECTRIC AND WAFER-BONDED GAAS-ALAS BRAGG MIRRORS, IEEE photonics technology letters, 9(7), 1997, pp. 866-868
METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF ALL-ALGAAS VISIBLE (SIMILAR-TO-700 NM) VERTICAL-CAVITY SURFACE-EMITTING LASERS ON MISORIENTED SUBSTRATES
Authors: HOU HQ CRAWFORD MH HAMMONS BE HICKMAN RJ
Citation: Hq. Hou et al., METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF ALL-ALGAAS VISIBLE (SIMILAR-TO-700 NM) VERTICAL-CAVITY SURFACE-EMITTING LASERS ON MISORIENTED SUBSTRATES, Journal of electronic materials, 26(10), 1997, pp. 1140-1144
GROWTH STUDY OF ALGAAS USING DIMETHYLETHYLAMINE ALANE AS THE ALUMINUMPRECURSOR
Authors: HOU HQ BREILAND WG HAMMONS BE BIEFELD RM BAUCOM KC STALL RA
Citation: Hq. Hou et al., GROWTH STUDY OF ALGAAS USING DIMETHYLETHYLAMINE ALANE AS THE ALUMINUMPRECURSOR, Journal of electronic materials, 26(10), 1997, pp. 1178-1183
TERTIARYBUTYLARSINE FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTHOF HIGH-PURITY, HIGH UNIFORMITY FILMS
Authors: CHUI HC BIEFELD RM HAMMONS BE BREILAND WG BRENNAN TM JONES ED MOFFAT HK KIM MH GRODZINSKI P CHANG KH LEE HC
Citation: Hc. Chui et al., TERTIARYBUTYLARSINE FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTHOF HIGH-PURITY, HIGH UNIFORMITY FILMS, Journal of electronic materials, 26(1), 1997, pp. 37-42
LASER-EMISSION FROM SEMICONDUCTOR MICROCAVITIES - TRANSITION FROM NONPERTURBATIVE TO PERTURBATIVE REGIMES
Authors: FAN XD WANG HL HOU HQ HAMMONS BE
Citation: Xd. Fan et al., LASER-EMISSION FROM SEMICONDUCTOR MICROCAVITIES - TRANSITION FROM NONPERTURBATIVE TO PERTURBATIVE REGIMES, Physical review. B, Condensed matter, 56(23), 1997, pp. 15256-15260
IN-SITU PRE-GROWTH CALIBRATION USING REFLECTANCE AS A CONTROL STRATEGY FOR MOCVD FABRICATION OF DEVICE STRUCTURES
Authors: BREILAND WG HOU HQ CHUI HC HAMMONS BE
Citation: Wg. Breiland et al., IN-SITU PRE-GROWTH CALIBRATION USING REFLECTANCE AS A CONTROL STRATEGY FOR MOCVD FABRICATION OF DEVICE STRUCTURES, Journal of crystal growth, 174(1-4), 1997, pp. 564-571
VERTICAL-CAVITY LASERS ON P-DOPED SUBSTRATES
Authors: LEAR KL HOU HQ BANAS JJ HAMMONS BE FURIOLI J OSINSKI M
Citation: Kl. Lear et al., VERTICAL-CAVITY LASERS ON P-DOPED SUBSTRATES, Electronics Letters, 33(9), 1997, pp. 783-784
SUBMILLIAMP 1.3-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH THRESHOLD CURRENT-DENSITY OF LESS-THAN-500A CM(2)/
Authors: QIAN Y ZHU ZH LO YH HUFFAKER DL DEPPE DG HOU HQ HAMMONS BE LIN W TU YK
Citation: Y. Qian et al., SUBMILLIAMP 1.3-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH THRESHOLD CURRENT-DENSITY OF LESS-THAN-500A CM(2)/, Electronics Letters, 33(12), 1997, pp. 1052-1054
DISLOCATION-FREE INSB GROWN ON GAAS COMPLIANT UNIVERSAL SUBSTRATES
Authors: EJECKAM FE SEAFORD ML LO YH HOU HQ HAMMONS BE
Citation: Fe. Ejeckam et al., DISLOCATION-FREE INSB GROWN ON GAAS COMPLIANT UNIVERSAL SUBSTRATES, Applied physics letters, 71(6), 1997, pp. 776-778
LONG-WAVELENGTH (1.3 MU-M) VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH A WAFER-BONDED MIRROR AND AN OXYGEN-IMPLANTED CONFINEMENT REGION
Authors: QIAN Y ZHU ZH LO YH HUFFAKER DL DEPPE DG HOU HQ HAMMONS BE LIN W TU YK
Citation: Y. Qian et al., LONG-WAVELENGTH (1.3 MU-M) VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH A WAFER-BONDED MIRROR AND AN OXYGEN-IMPLANTED CONFINEMENT REGION, Applied physics letters, 71(1), 1997, pp. 25-27
CARBON DOPING AND ETCHING OF ALXGA1-XAS 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) WITH CARBON-TETRACHLORIDE IN METALORGANIC VAPOR-PHASE EPITAXY
Authors: HOU HQ HAMMONS BE CHUI HC
Citation: Hq. Hou et al., CARBON DOPING AND ETCHING OF ALXGA1-XAS 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) WITH CARBON-TETRACHLORIDE IN METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 70(26), 1997, pp. 3600-3602
WET OXIDATION OF ALXGA1-XAS - TEMPORAL EVOLUTION OF COMPOSITION AND MICROSTRUCTURE AND THE IMPLICATIONS FOR METAL-INSULATOR-SEMICONDUCTOR APPLICATIONS
Authors: ASHBY CIH SULLIVAN JP NEWCOMER PP MISSERT NA HOU HQ HAMMONS BE HAFICH MJ BACA AG
Citation: Cih. Ashby et al., WET OXIDATION OF ALXGA1-XAS - TEMPORAL EVOLUTION OF COMPOSITION AND MICROSTRUCTURE AND THE IMPLICATIONS FOR METAL-INSULATOR-SEMICONDUCTOR APPLICATIONS, Applied physics letters, 70(18), 1997, pp. 2443-2445
LATTICE ENGINEERED COMPLIANT SUBSTRATE FOR DEFECT-FREE HETEROEPITAXIAL GROWTH
Authors: EJECKAM FE LO YH SUBRAMANIAN S HOU HQ HAMMONS BE
Citation: Fe. Ejeckam et al., LATTICE ENGINEERED COMPLIANT SUBSTRATE FOR DEFECT-FREE HETEROEPITAXIAL GROWTH, Applied physics letters, 70(13), 1997, pp. 1685-1687
HIGHLY UNIFORM AND REPRODUCIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH IN-SITU REFLECTOMETRY
Authors: HOU HQ CHUI HC CHOQUETTE KD HAMMONS BE BREILAND WG
Citation: Hq. Hou et al., HIGHLY UNIFORM AND REPRODUCIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH IN-SITU REFLECTOMETRY, IEEE photonics technology letters, 8(10), 1996, pp. 1285-1287
HIGH-PURITY GAAS AND ALGAAS GROWN USING TERTIARYBUTYLARSINE, TRIMETHYLALUMINUM, AND TRIMETHYLGALLIUM
Authors: BIEFELD RM CHUI HC HAMMONS BE BREILAND WG BRENNAN TM JONES ED KIM MH GRODZINSKI P CHANG KH LEE HC
Citation: Rm. Biefeld et al., HIGH-PURITY GAAS AND ALGAAS GROWN USING TERTIARYBUTYLARSINE, TRIMETHYLALUMINUM, AND TRIMETHYLGALLIUM, Journal of crystal growth, 163(3), 1996, pp. 212-219
X-RAY RECIPROCAL-SPACE MAPPING OF STRAIN RELAXATION AND TILTING IN LINEARLY GRADED INALAS BUFFERS
Authors: OLSEN JA HU EL LEE SR FRITZ IJ HOWARD AJ HAMMONS BE TSAO JY
Citation: Ja. Olsen et al., X-RAY RECIPROCAL-SPACE MAPPING OF STRAIN RELAXATION AND TILTING IN LINEARLY GRADED INALAS BUFFERS, Journal of applied physics, 79(7), 1996, pp. 3578-3584
Risultati: 1-25 | 26-42