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Results: 1-8 |
Results: 8
STI PROCESS STEPS FOR SUB-QUARTER MICRON CMOS
Authors: SALLAGOITY P GAILLARD F RIVOIRE M PAOLI M HAOND M MCCLATHIE S
Citation: P. Sallagoity et al., STI PROCESS STEPS FOR SUB-QUARTER MICRON CMOS, Microelectronics and reliability, 38(2), 1998, pp. 271-276
LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.25 MU-M SI CMOS TRANSISTORS
Authors: BOUTCHACHA T GHIBAUDO G GUEGAN G HAOND M
Citation: T. Boutchacha et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.25 MU-M SI CMOS TRANSISTORS, Journal of non-crystalline solids, 216, 1997, pp. 192-197
ANALYSIS OF WIDTH EDGE EFFECTS IN ADVANCED ISOLATION SCHEMES FOR DEEP-SUBMICRON CMOS TECHNOLOGIES
Authors: SALLAGOITY P ADAHANIFI M PAOLI M HAOND M
Citation: P. Sallagoity et al., ANALYSIS OF WIDTH EDGE EFFECTS IN ADVANCED ISOLATION SCHEMES FOR DEEP-SUBMICRON CMOS TECHNOLOGIES, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1900-1906
IMPROVED HOT-CARRIER IMMUNITY OF P-MOSFETS WITH 8NM THICK NITRIDED GATE-OXIDE DURING BIDIRECTIONAL STRESSING
Authors: BRAVAIX A VUILLAUME D GOGUENHEIM D DORVAL D HAOND M
Citation: A. Bravaix et al., IMPROVED HOT-CARRIER IMMUNITY OF P-MOSFETS WITH 8NM THICK NITRIDED GATE-OXIDE DURING BIDIRECTIONAL STRESSING, Microelectronic engineering, 28(1-4), 1995, pp. 273-276
IMPACT OF LDD STRUCTURES ON THE OPERATION OF SILICON MOSFETS AT LOW-TEMPERATURE
Authors: HAFEZ IM GHIBAUDO G BALESTRA F HAOND M
Citation: Im. Hafez et al., IMPACT OF LDD STRUCTURES ON THE OPERATION OF SILICON MOSFETS AT LOW-TEMPERATURE, Solid-state electronics, 38(2), 1995, pp. 419-424
THE ADEQUAT PROJECT FOR DEVELOPMENT AND TRANSFER OF 0.25 MU-M LOGIC COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR MODULES
Authors: DEKEERSMAECKER R DECLERCK G FELIX P HAOND M HILL C JANSSEN G LORENZ J MAES H MONTREE A NEPPL F PATRUNO P RUDAN M RYSSEL H VANDENHOVE L VANDERVORST W VANOMMEN A
Citation: R. Dekeersmaecker et al., THE ADEQUAT PROJECT FOR DEVELOPMENT AND TRANSFER OF 0.25 MU-M LOGIC COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR MODULES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2852-2859
A COMPARATIVE-STUDY OF TISI2, OBTAINED BY SOLID-STATE REACTION AND CHEMICAL-VAPOR-DEPOSITION
Authors: GOUYPAILLER P HAOND M MATHIOT D GAUNEAU M PERIO A REGOLINI JL
Citation: P. Gouypailler et al., A COMPARATIVE-STUDY OF TISI2, OBTAINED BY SOLID-STATE REACTION AND CHEMICAL-VAPOR-DEPOSITION, Applied surface science, 73, 1993, pp. 25-30
PERFORMANCE AND PHYSICAL-MECHANISMS IN LDD MOS-TRANSISTOR FROM ROOM TO LIQUID-HELIUM TEMPERATURES
Authors: EMRANI A HAFEZ IM BALESTRA F GHIBAUDO G HAOND M
Citation: A. Emrani et al., PERFORMANCE AND PHYSICAL-MECHANISMS IN LDD MOS-TRANSISTOR FROM ROOM TO LIQUID-HELIUM TEMPERATURES, Physica status solidi. a, Applied research, 140(2), 1993, pp. 115-118
Risultati: 1-8 |