Authors: HARBSMEIER F BOLSE W DASILVA MR DASILVA MF SOARES JC

Citation: F. Harbsmeier et al., EPITAXIAL REGROWTH OF C-IMPLANTED AND N-IMPLANTED SILICON AND ALPHA-QUARTZ, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 263-267

Authors: HARBSMEIER F CONRAD J BOLSE W

Citation: F. Harbsmeier et al., GENERATION AND RELIEF OF MECHANICAL STRESSES IN ION-IRRADIATED SIC AND SIO2, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 505-510

Authors: KRAVETSKY IV KULYUK LL MCGILP JF CAVANAGH M CHANDOLA S BONESS J MAROWSKY G HARBSMEIER F

Citation: Iv. Kravetsky et al., A STUDY OF ION-IMPLANTED SI(111) AND SI(111) SILICON-OXIDE BY OPTICAL2ND-HARMONIC GENERATION, Surface science, 404(1-3), 1998, pp. 542-546

Authors: HARBSMEIER F BOLSE W

Citation: F. Harbsmeier et W. Bolse, ION-BEAM-INDUCED AMORPHIZATION IN ALPHA-QUARTZ, Journal of applied physics, 83(8), 1998, pp. 4049-4054