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Results:
1-15
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Results: 15
Authors:
MOODIE DG
HARLOW MJ
GUY MJ
PERRIN SD
FORD CW
ROBERTSON MJ
Citation: Dg. Moodie et al., DISCRETE ELECTROABSORPTION MODULATORS WITH ENHANCED MODULATION DEPTH, Journal of lightwave technology, 14(9), 1996, pp. 2035-2043
Authors:
FISHER MA
HUANG YZ
DANN AJ
ELTON DJ
HARLOW MJ
PERRIN SD
REED J
REID I
ADAMS MJ
Citation: Ma. Fisher et al., PULSED ELECTRICAL OPERATION OF 1.5-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 7(6), 1995, pp. 608-610
Authors:
COLLINS JV
LEALMAN IF
FIDDYMENT PJ
JONES CA
WALLER RG
RIVERS LJ
COOPER K
PERRIN SD
NIELD MW
HARLOW MJ
Citation: Jv. Collins et al., PASSIVE ALIGNMENT OF A TAPERED LASER WITH MORE THAN 50-PERCENT COUPLING EFFICIENCY, Electronics Letters, 31(9), 1995, pp. 730-731
Authors:
MOODIE DG
ELLIS AD
THURLOW AR
HARLOW MJ
LEALMAN IF
PERRIN SD
RIVERS LJ
ROBERTSON MJ
Citation: Dg. Moodie et al., MULTIQUANTUM-WELL ELECTROABSORPTION MODULATORS FOR 80GBIT S OTDM SYSTEMS/, Electronics Letters, 31(16), 1995, pp. 1370-1371
Authors:
HARLOW MJ
DUNCAN WJ
LEALMAN IF
SPURDENS PC
Citation: Mj. Harlow et al., CHROMIUM-DOPED SEMIINSULATING INP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 140(1-2), 1994, pp. 19-27
Authors:
SELTZER CP
PERRIN SD
HARLOW MJ
STUDD R
SPURDENS PC
Citation: Cp. Seltzer et al., LONG-TERM RELIABILITY OF STRAIN-COMPENSATED INGAAS(P) INP MQW BH LASERS/, Electronics Letters, 30(3), 1994, pp. 227-229
Authors:
LEALMAN IF
HARLOW MJ
RIVERS LJ
SMITH PJ
Citation: If. Lealman et al., 1.3-MU-M INGAASP HALF DUPLEX TRANSCEIVERS FABRICATED USING A NOVEL CHROMIUM-DOPED SEMIINSULATING BLOCKING STRUCTURE, Electronics Letters, 30(3), 1994, pp. 265-266
Authors:
LEALMAN IF
RIVERS LJ
HARLOW MJ
PERRIN SD
Citation: If. Lealman et al., INGAASP INP TAPERED ACTIVE LAYER MULTIQUANTUM-WELL LASER WITH 1.8-DB COUPLING LOSS TO CLEAVED SINGLEMODE FIBER/, Electronics Letters, 30(20), 1994, pp. 1685-1687
Authors:
SPURDENS PC
SALTER MA
HARLOW MJ
NEWSON DJ
Citation: Pc. Spurdens et al., CONTROL OF PARALLEL CONDUCTION IN MOVPE GROWN INP BASED HFETS, Electronics Letters, 30(17), 1994, pp. 1453-1455
Authors:
LEALMAN IF
SELTZER CP
RIVERS LJ
HARLOW MJ
PERRIN SD
Citation: If. Lealman et al., LOW-THRESHOLD CURRENT 1.6-MU-M INGAASP INP TAPERED ACTIVE LAYER MULTIQUANTUM-WELL LASER WITH IMPROVED COUPLING TO CLEAVED SINGLEMODE FIBER/, Electronics Letters, 30(12), 1994, pp. 973-975
Authors:
LEALMAN IF
RIVERS LJ
HARLOW MJ
PERRIN SD
ROBERTSON MJ
Citation: If. Lealman et al., 1.56-MU-M INGAASP INP TAPERED ACTIVE LAYER MULTIQUANTUM-WELL LASER WITH IMPROVED COUPLING TO CLEAVED SINGLEMODE FIBER/, Electronics Letters, 30(11), 1994, pp. 857-859
Authors:
WAKE D
NEWSON DJ
HARLOW MJ
HENNING ID
Citation: D. Wake et al., OPTICALLY-BIASED, EDGE-COUPLED INP INGAAS HETEROJUNCTION PHOTOTRANSISTORS/, Electronics Letters, 29(25), 1993, pp. 2217-2219
Authors:
FISHER MA
DANN AJ
DAVIES DAO
ELTON DJ
HARLOW MJ
HATCH CB
PERRIN SD
REED J
REID I
ADAMS MJ
Citation: Ma. Fisher et al., HIGH-TEMPERATURE PHOTOPUMPING OF 1.55-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS, Electronics Letters, 29(17), 1993, pp. 1548-1550
Authors:
WOOLNOUGH PN
BIRDSALL P
OSULLIVAN PJ
COCKBURN AJ
HARLOW MJ
Citation: Pn. Woolnough et al., FABRICATION OF A 4-CHANNEL DFB LASER TRANSMITTER OEIC FOR 1550 NM OPERATION, Electronics Letters, 29(15), 1993, pp. 1388-1390
Authors:
LEALMAN IF
HARLOW MJ
PERRIN SD
Citation: If. Lealman et al., EFFECTS OF ZN DOPING ON MODULATION BANDWIDTH OF 1.55 MU-M INGAAS INGAASP MULTIQUANTUM-WELL DFB LASERS, Electronics Letters, 29(13), 1993, pp. 1197-1198
Risultati:
1-15
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