Authors: HARTFORD CL HILLARD RJ MAZUR RG FOAD MA

Citation: Cl. Hartford et al., HIGH-RESOLUTION DAMAGE DEPTH PROFILES OF UNANNEALED SUB-100 NM B+ IMPLANTS IN (100) SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 316-319

Authors: HILLARD RJ SHERBONDY JC HARTFORD CL WEINZIERL SR MAUR RG

Citation: Rj. Hillard et al., EVALUATION OF DIAMOND-GROUND BEVELED SURFACES WITH HG GATE CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 411-414