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Results: 1-15 |
Results: 15
ION-ASSISTED NUCLEATION AND GROWTH OF GAN ON SAPPHIRE(0001)
Authors: HEADRICK RL KYCIA S WOLL AR BROCK JD MURTY MVR
Citation: Rl. Headrick et al., ION-ASSISTED NUCLEATION AND GROWTH OF GAN ON SAPPHIRE(0001), Physical review. B, Condensed matter, 58(8), 1998, pp. 4818-4824
X-RAY-SCATTERING STUDY OF THE SURFACE-MORPHOLOGY OF AU(111) DURING AR+ ION IRRADIATION
Authors: MURTY MVR CURCIC T JUDY A COOPER BH WOLL AR BROCK JD KYCIA S HEADRICK RL
Citation: Mvr. Murty et al., X-RAY-SCATTERING STUDY OF THE SURFACE-MORPHOLOGY OF AU(111) DURING AR+ ION IRRADIATION, Physical review letters, 80(21), 1998, pp. 4713-4716
REAL-TIME X-RAY-SCATTERING MEASUREMENT OF THE NUCLEATION KINETICS OF CUBIC GALLIUM NITRIDE ON BETA-SIC(001)
Authors: HEADRICK RL KYCIA S PARK YK WOLL AR BROCK JD
Citation: Rl. Headrick et al., REAL-TIME X-RAY-SCATTERING MEASUREMENT OF THE NUCLEATION KINETICS OF CUBIC GALLIUM NITRIDE ON BETA-SIC(001), Physical review. B, Condensed matter, 54(20), 1996, pp. 14686-14691
SMALL-ANGLE X-RAY-SCATTERING FROM LIPID BILAYER IS WELL DESCRIBED BY MODIFIED CAILLE THEORY, BUT NOT BY PARACRYSTALLINE THEORY
Authors: ZHANG R TNAGLE S SUN W HEADRICK RL IRVING TC SURER RM NAGLE JF
Citation: R. Zhang et al., SMALL-ANGLE X-RAY-SCATTERING FROM LIPID BILAYER IS WELL DESCRIBED BY MODIFIED CAILLE THEORY, BUT NOT BY PARACRYSTALLINE THEORY, Biophysical journal, 70(2), 1996, pp. 357-357
SMALL-ANGLE X-RAY-SCATTERING FROM LIPID BILAYERS IS WELL DESCRIBED BYMODIFIED CAILLE THEORY BUT NOT BY PARACRYSTALLINE THEORY
Authors: ZHANG RT TRISTRAMNAGLE S SUN WJ HEADRICK RL IRVING TC SUTER RM NAGLE JF
Citation: Rt. Zhang et al., SMALL-ANGLE X-RAY-SCATTERING FROM LIPID BILAYERS IS WELL DESCRIBED BYMODIFIED CAILLE THEORY BUT NOT BY PARACRYSTALLINE THEORY, Biophysical journal, 70(1), 1996, pp. 349-357
ROUGHNESS IN SI1-XGEX SI SUPERLATTICES - GROWTH TEMPERATURE-DEPENDENCE/
Authors: HEADRICK RL BARIBEAU JM
Citation: Rl. Headrick et Jm. Baribeau, ROUGHNESS IN SI1-XGEX SI SUPERLATTICES - GROWTH TEMPERATURE-DEPENDENCE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 782-786
NATURE AND EVOLUTION OF INTERFACES IN SI SI1-XGEX SUPERLATTICES/
Authors: BARIBEAU JM LOCKWOOD DJ HEADRICK RL
Citation: Jm. Baribeau et al., NATURE AND EVOLUTION OF INTERFACES IN SI SI1-XGEX SUPERLATTICES/, Journal of electronic materials, 24(4), 1995, pp. 341-349
ELECTRON-MICROSCOPY OF THE ORDERED BORON 2X1 STRUCTURE BURIED IN CRYSTALLINE SILICON
Authors: WEIR BE EAGLESHAM DJ FELDMAN LC LUFTMAN HS HEADRICK RL
Citation: Be. Weir et al., ELECTRON-MICROSCOPY OF THE ORDERED BORON 2X1 STRUCTURE BURIED IN CRYSTALLINE SILICON, Applied surface science, 84(4), 1995, pp. 413-418
CRITICAL FLUCTUATIONS IN MEMBRANES
Authors: ZHANG RT SUN WJ TRISTRAMNAGLE S HEADRICK RL SUTER RM NAGLE JF
Citation: Rt. Zhang et al., CRITICAL FLUCTUATIONS IN MEMBRANES, Physical review letters, 74(14), 1995, pp. 2832-2835
ANISOTROPIC ROUGHNESS IN GE SI SUPERLATTICES
Authors: HEADRICK RL BARIBEAU JM STRAUSSER YE
Citation: Rl. Headrick et al., ANISOTROPIC ROUGHNESS IN GE SI SUPERLATTICES, Applied physics letters, 66(1), 1995, pp. 96-98
INTERFACIAL STUDIES IN SEMICONDUCTOR HETEROSTRUCTURES BY X-RAY-DIFFRACTION TECHNIQUES
Authors: BARIBEAU JM HEADRICK RL MAIGNE P
Citation: Jm. Baribeau et al., INTERFACIAL STUDIES IN SEMICONDUCTOR HETEROSTRUCTURES BY X-RAY-DIFFRACTION TECHNIQUES, Scanning microscopy, 8(4), 1994, pp. 813-826
ELECTRICAL CHARACTERIZATION OF AN ULTRAHIGH CONCENTRATION BORON DELTA-DOPING LAYER
Authors: WEIR BE FELDMAN LC MONROE D GROSSMANN HJ HEADRICK RL HART TR
Citation: Be. Weir et al., ELECTRICAL CHARACTERIZATION OF AN ULTRAHIGH CONCENTRATION BORON DELTA-DOPING LAYER, Applied physics letters, 65(6), 1994, pp. 737-739
INTERFACE ROUGHNESS IN GE SI SUPERLATTICES
Authors: HEADRICK RL BARIBEAU JM
Citation: Rl. Headrick et Jm. Baribeau, INTERFACE ROUGHNESS IN GE SI SUPERLATTICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1514-1517
INFLUENCE OF ANNEALING ON THE INTERFACE STRUCTURE AND STRAIN RELIEF IN SI GE HETEROSTRUCTURES ON (100) SI/
Authors: LOCKWOOD DJ BARIBEAU JM JACKMAN TE AEBI P TYLISZCZAK T HITCHCOCK AP HEADRICK RL
Citation: Dj. Lockwood et al., INFLUENCE OF ANNEALING ON THE INTERFACE STRUCTURE AND STRAIN RELIEF IN SI GE HETEROSTRUCTURES ON (100) SI/, Scanning microscopy, 7(2), 1993, pp. 457-471
CORRELATED ROUGHNESS IN (GE(M) SI(N))P SUPERLATTICES ON SI(100)/
Authors: HEADRICK RL BARIBEAU JM
Citation: Rl. Headrick et Jm. Baribeau, CORRELATED ROUGHNESS IN (GE(M) SI(N))P SUPERLATTICES ON SI(100)/, Physical review. B, Condensed matter, 48(12), 1993, pp. 9174-9177
Risultati: 1-15 |