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Authors: CAFFIN D DUCHENOIS AM HELIOT F BESOMBES C BENCHIMOL JL LAUNAY P
Citation: D. Caffin et al., BASE-COLLECTOR LEAKAGE CURRENTS IN INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 930-936

Authors: ETRILLARD J HELIOT F OSSART P JUHEL M PATRIARCHE G CARCENAC P VIEU C PUECH M MAQUIN P
Citation: J. Etrillard et al., SIDEWALL AND SURFACE-INDUCED DAMAGE COMPARISON BETWEEN REACTIVE ION ETCHING AND INDUCTIVE PLASMA-ETCHING OF INP USING A CH4 H-2/O-2 GAS-MIXTURE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1056-1061

Authors: PALMIER JF MINOT C LEPERSON H HARMAND JC BOUADMA N ESNAULT JC ARQUEY D HELIOT F MEDUS JP
Citation: Jf. Palmier et al., REFLECTION GAIN UP TO 6 DB AT 65 GHZ IN GAINAS ALINAS SUPERLATTICE OSCILLATORS/, Electronics Letters, 32(16), 1996, pp. 1506-1507

Authors: BENCHIMOL JL ALEXANDRE F JOURDAN N POUGNET AM MELLET R SERMAGE B HELIOT F DUBONCHEVALLIER C
Citation: Jl. Benchimol et al., CARBON DOPING OF GAAS FOR HETEROJUNCTION BIPOLAR-TRANSISTORS - A COMPARISON BETWEEN MBE AND CBE, Journal of crystal growth, 127(1-4), 1993, pp. 690-694
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