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Results:
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Results: 2
A LOW-TEMPERATURE GATE OXIDE PROCESS FOR N-CHANNEL SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS
Authors:
BOZON B ZIJLSTRA T GLUCK M HERSENER J VANDERDRIFT E KONIG U
Citation:
B. Bozon et al., A LOW-TEMPERATURE GATE OXIDE PROCESS FOR N-CHANNEL SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS, Journal of applied physics, 82(9), 1997, pp. 4611-4615
COSI2 AND TISI2 FOR SI SIGE HETERODEVICES
Authors:
GLUCK M SCHUPPEN A ROSLER M HEINRICH W HERSENER J KONIG U YAM O CYTERMANN C EIZENBERG M
Citation:
M. Gluck et al., COSI2 AND TISI2 FOR SI SIGE HETERODEVICES, Thin solid films, 270(1-2), 1995, pp. 549-554
Risultati:
1-2
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