Authors: HERZOG L EGGER U BREITENSTEIN O HETTWER HG

Citation: L. Herzog et al., DEFECTS IN GAAS AFTER SI INDIFFUSION AND ANNEALING - A TEM AND CL STUDY, Materials science & engineering. B, Solid-state materials for advanced technology, 30(1), 1995, pp. 43-53

Authors: BOSKER G HETTWER HG RUCKI A STOLWIJK NA MEHRER H JAGER W URBAN K

Citation: G. Bosker et al., THE INFLUENCE OF PHOSPHORUS, ARSENIC AND ANTIMONY VAPOR AMBIENTS ON THE DIFFUSION OF ZINC INTO GALLIUM-ARSENIDE, Materials chemistry and physics, 42(1), 1995, pp. 68-71

Authors: BOSKER G STOLWIJK NA HETTWER HG RUCKI A JAGER W SODERVALL U

Citation: G. Bosker et al., USE OF ZINC DIFFUSION INTO GAAS FOR DETERMINING PROPERTIES OF GALLIUMINTERSTITIALS, Physical review. B, Condensed matter, 52(16), 1995, pp. 11927-11931

Authors: WITTORF D RUCKI A JAGER W DIXON RH URBAN K HETTWER HG STOLWIJK NA MEHRER H

Citation: D. Wittorf et al., EVIDENCE OF POINT-DEFECT SUPERSATURATION DURING ZN DIFFUSION IN INP SINGLE-CRYSTALS, Journal of applied physics, 77(6), 1995, pp. 2843-2845

Authors: JAGER W RUCKI A URBAN K HETTWER HG STOLWIJK NA MEHRER H TAN TY

Citation: W. Jager et al., FORMATION OF VOID GA-PRECIPITATE PAIRS DURING ZN DIFFUSION INTO GAAS - THE COMPETITION OF 2 THERMODYNAMIC DRIVING FORCES, Journal of applied physics, 74(7), 1993, pp. 4409-4422