ACNP - Italian Periodicals Catalogue

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Results: 1-9 |

Results: 9

DISLOCATION GENERATION IN GAN HETEROEPITAXY

Authors: WU XH FINI P TARSA EJ HEYING B KELLER S MISHRA UK DENBAARS SP SPECK JS

Citation: Xh. Wu et al., DISLOCATION GENERATION IN GAN HETEROEPITAXY, Journal of crystal growth, 190, 1998, pp. 231-243

HOMOEPITAXIAL GROWTH OF GAN UNDER GA-STABLE AND N-STABLE CONDITIONS BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

Authors: TARSA EJ HEYING B WU XH FINI P DENBAARS SP SPECK JS

Citation: Ej. Tarsa et al., HOMOEPITAXIAL GROWTH OF GAN UNDER GA-STABLE AND N-STABLE CONDITIONS BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of applied physics, 82(11), 1997, pp. 5472-5479

EFFECT OF THE TRIMETHYLGALLIUM FLOW DURING NUCLEATION LAYER GROWTH ONTHE PROPERTIES OF GAN GROWN ON SAPPHIRE

Authors: KELLER S KAPOLNEK D KELLER BP WU YF HEYING B SPECK JS MISHRA UK DENBAARS SP

Citation: S. Keller et al., EFFECT OF THE TRIMETHYLGALLIUM FLOW DURING NUCLEATION LAYER GROWTH ONTHE PROPERTIES OF GAN GROWN ON SAPPHIRE, JPN J A P 2, 35(3A), 1996, pp. 285-288

MORPHOLOGICAL AND STRUCTURAL TRANSITIONS IN GAN FILMS GROWN ON SAPPHIRE BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors: WU XH FINI P KELLER S TARSA EJ HEYING B MISHRA UK DENBAARS SP SPECK JS

Citation: Xh. Wu et al., MORPHOLOGICAL AND STRUCTURAL TRANSITIONS IN GAN FILMS GROWN ON SAPPHIRE BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 35(12B), 1996, pp. 1648-1651

ROLE OF THREADING DISLOCATION-STRUCTURE ON THE X-RAY-DIFFRACTION PEAKWIDTHS IN EPITAXIAL GAN FILMS

Authors: HEYING B WU XH KELLER S LI Y KAPOLNEK D KELLER BP DENBAARS SP SPECK JS

Citation: B. Heying et al., ROLE OF THREADING DISLOCATION-STRUCTURE ON THE X-RAY-DIFFRACTION PEAKWIDTHS IN EPITAXIAL GAN FILMS, Applied physics letters, 68(5), 1996, pp. 643-645

INFLUENCE OF SAPPHIRE NITRIDATION ON PROPERTIES OF GALLIUM NITRIDE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors: KELLER S KELLER BP WU YF HEYING B KAPOLNEK D SPECK JS MISHRA UK DENBAARS SP

Citation: S. Keller et al., INFLUENCE OF SAPPHIRE NITRIDATION ON PROPERTIES OF GALLIUM NITRIDE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(11), 1996, pp. 1525-1527

NUCLEATION LAYER EVOLUTION IN METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITIONGROWN GAN

Authors: WU XH KAPOLNEK D TARSA EJ HEYING B KELLER S KELLER BP MISHRA UK DENBAARS SP SPECK JS

Citation: Xh. Wu et al., NUCLEATION LAYER EVOLUTION IN METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITIONGROWN GAN, Applied physics letters, 68(10), 1996, pp. 1371-1373

METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF HIGH OPTICAL-QUALITYAND HIGH-MOBILITY GAN

Authors: KELLER BP KELLER S KAPOLNEK D JIANG WN WU YF MASUI H WU X HEYING B SPECK JS MISHRA UK DENBAARS SP

Citation: Bp. Keller et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF HIGH OPTICAL-QUALITYAND HIGH-MOBILITY GAN, Journal of electronic materials, 24(11), 1995, pp. 1707-1709

STRUCTURAL EVOLUTION IN EPITAXIAL METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN FILMS ON SAPPHIRE

Authors: KAPOLNEK D WU XH HEYING B KELLER S KELLER BP MISHRA UK DENBAARS SP SPECK JS

Citation: D. Kapolnek et al., STRUCTURAL EVOLUTION IN EPITAXIAL METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN FILMS ON SAPPHIRE, Applied physics letters, 67(11), 1995, pp. 1541-1543

Risultati: 1-9 |