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Authors: HIGASHIWAKI M KUROYANAGI K FUJITA K EGAMI N SHIMOMURA S HIYAMIZU S

Citation: M. Higashiwaki et al., TEMPERATURE-DEPENDENCE OF EXCITON LIFETIMES IN HIGH-DENSITY GAAS (GAAS)(4)(ALAS)(2) QUANTUM WIRES GROWN ON (775)B-ORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Solid-state electronics, 42(7-8), 1998, pp. 1581-1585

Authors: YAMAMOTO M HIGASHIWAKI M SHIMOMURA S SANO N HIYAMIZU S

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Authors: HIGASHIWAKI M YAMAMOTO M SHIMOMURA S ADACHI A HIYAMIZU S

Citation: M. Higashiwaki et al., HIGH-DENSITY GAAS (GAAS)(2)(ALAS)(2) QUANTUM WIRES NATURALLY FORMED ON (775)B-ORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 175, 1997, pp. 814-818

Authors: HIGASHIWAKI M YAMAMOTO M SHIMOMURA S HIYAMIZU S

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