Authors: CHANG KT CHEN WM SWIFT C HIGMAN JM PAULSON WM CHANG KM

Citation: Kt. Chang et al., A NEW SONOS MEMORY USING SOURCE-SIDE INJECTION FOR PROGRAMMING, IEEE electron device letters, 19(7), 1998, pp. 253-255

Authors: BAILEY DW HIGMAN JM

Citation: Dw. Bailey et Jm. Higman, A DISCRETIZED K-SPACE METHOD FOR CHARGE-TRANSPORT IN SEMICONDUCTORS, Journal of computational physics, 120(1), 1995, pp. 117-127

Authors: ABRAMO A BAUDRY L BRUNETTI R CASTAGNE R CHAREF M DESSENNE F DOLLFUS P DUTTON R ENGL WL FAUQUEMBERGUE R FIEGNA C FISCHETTI MV GALDIN S GOLDSMAN N HACKEL M HAMAGUCHI C HESS K HENNACY K HESTO P HIGMAN JM IIZUKA T JUNGEMANN C KAMAKURA Y KOSINA H KUNIKIYO T LAUX SE LIM HC MAZIAR C MIZUNO H PEIFER HJ RAMASWAMY S SANO N SCORBOHACI PG SELBERHERR S TAKENAKA M TANG TW TANIGUCHI K THOBEL JL THOMA R TOMIZAWA K TOMIPZAWA M VOGELSANG T WANG SL WANG XL YAO CS YODER PD YOSHII A

Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654

Authors: ABRAMO A VENTURI F SANGIORGI E HIGMAN JM RICCO B

Citation: A. Abramo et al., A NUMERICAL-METHOD TO COMPUTE ISOTROPIC BAND MODELS FROM ANISOTROPIC SEMICONDUCTOR BAND STRUCTURES, IEEE transactions on computer-aided design of integrated circuits and systems, 12(9), 1993, pp. 1327-1336

Authors: BHATT AR KIM KW STROSCIO MA HIGMAN JM

Citation: Ar. Bhatt et al., SIMPLIFIED MICROSCOPIC MODEL FOR ELECTRON OPTICAL-PHONON INTERACTIONSIN QUANTUM-WELLS, Physical review. B, Condensed matter, 48(19), 1993, pp. 14671-14674

Authors: YODER PD HIGMAN JM BUDE J HESS K

Citation: Pd. Yoder et al., MONTE-CARLO SIMULATION OF HOT-ELECTRON TRANSPORT IN SI USING A UNIFIED PSEUDOPOTENTIAL DESCRIPTION OF THE CRYSTAL, Semiconductor science and technology, 7(3B), 1992, pp. 357-359