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NEW PROCESSING METHODS FOR N-GAAS FIELD-EFFECT TRANSISTORS USING NEUTRALIZATION OF SHALLOW DONORS BY HYDROGEN AND DISSOCIATION PROCESS BY UV-LIGHT
Authors: HING NNC MEZIERE S VALIN I CONSTANT E
Citation: Nnc. Hing et al., NEW PROCESSING METHODS FOR N-GAAS FIELD-EFFECT TRANSISTORS USING NEUTRALIZATION OF SHALLOW DONORS BY HYDROGEN AND DISSOCIATION PROCESS BY UV-LIGHT, Electronics Letters, 31(16), 1995, pp. 1391-1393
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