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Results: 1-9 |
Results: 9
RELIABILITY AND QUALIFICATION METHODOLOGY OF 60 W QCW LINEAR BAR ARRAYS
Authors: STOLTZ MP BURGAUD P MURGADELLA F HIRTZ JP PETIT P VERVOITTE A
Citation: Mp. Stoltz et al., RELIABILITY AND QUALIFICATION METHODOLOGY OF 60 W QCW LINEAR BAR ARRAYS, Microelectronics and reliability, 38(4), 1998, pp. 689-696
GENERATION OF HIGH-ENERGY (0.3-MU-J) SHORT PULSES (LESS-THAN-400 PS) FROM A GAIN-SWITCHED LASER-DIODE STACK WITH SUBNANOSECOND ELECTRICAL PUMP PULSES
Authors: STELMAKH N LOURTIOZ JM MARQUEBIELLE G VOLLUET G HIRTZ JP
Citation: N. Stelmakh et al., GENERATION OF HIGH-ENERGY (0.3-MU-J) SHORT PULSES (LESS-THAN-400 PS) FROM A GAIN-SWITCHED LASER-DIODE STACK WITH SUBNANOSECOND ELECTRICAL PUMP PULSES, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 245-249
A COMPARATIVE-STUDY OF GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY CBE USING TBA/TBP AND ASH3/PH3 SOURCES/
Authors: NG GI PAVLIDIS D SAMELIS A PEHLKE D GARCIA JC HIRTZ JP
Citation: Gi. Ng et al., A COMPARATIVE-STUDY OF GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY CBE USING TBA/TBP AND ASH3/PH3 SOURCES/, IEEE electron device letters, 15(10), 1994, pp. 380-382
PAPERS PRESENTED AT THE EUROPEAN-MATERIALS-RESEARCH-SOCIETY 1993 SPRING MEETING, SYMPOSIUM B - LOW TEMPERATURE MOLECULAR BEAM EPITAXIAL III-V MATERIALS - PHYSICS AND APPLICATIONS, MAY 4-7, 1993, STRASBOURG, FRANCE - PREFACE
Authors: VONBARDELEBEN HJ HIRTZ JP MANASREH MO
Citation: Hj. Vonbardeleben et al., PAPERS PRESENTED AT THE EUROPEAN-MATERIALS-RESEARCH-SOCIETY 1993 SPRING MEETING, SYMPOSIUM B - LOW TEMPERATURE MOLECULAR BEAM EPITAXIAL III-V MATERIALS - PHYSICS AND APPLICATIONS, MAY 4-7, 1993, STRASBOURG, FRANCE - PREFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 180000007-180000007
EUROPEAN-MATERIALS-RESEARCH-SOCIETY 1993 SPRING MEETING, SYMPOSIUM-A - MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS AND PHOTONICS, MAY 4-7, 1993, STRASBOURG, FRANCE - PREFACE
Authors: HIRTZ JP MEIER H WHITEHOUSE C
Citation: Jp. Hirtz et al., EUROPEAN-MATERIALS-RESEARCH-SOCIETY 1993 SPRING MEETING, SYMPOSIUM-A - MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS AND PHOTONICS, MAY 4-7, 1993, STRASBOURG, FRANCE - PREFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 180000011-180000011
LOW-PRESSURE MOVPE GROWTH OF ZNSE, ZNTE, AND ZNSE ZNTE STRAINED-LAYERSUPERLATTICES/
Authors: BRIOT N CLOITRE T BRIOT O GIL B BERTHO D JOUANIN C AULOMBARD RL HIRTZ JP HUBER A
Citation: N. Briot et al., LOW-PRESSURE MOVPE GROWTH OF ZNSE, ZNTE, AND ZNSE ZNTE STRAINED-LAYERSUPERLATTICES/, Journal of electronic materials, 22(5), 1993, pp. 537-543
CHEMICAL BEAM EPITAXY OF GA0.5IN0.5P USING TERTIARYBUTYLPHOSPHINE
Authors: GARCIA JC REGRENY P DELAGE SL BLANCK H HIRTZ JP
Citation: Jc. Garcia et al., CHEMICAL BEAM EPITAXY OF GA0.5IN0.5P USING TERTIARYBUTYLPHOSPHINE, Journal of crystal growth, 127(1-4), 1993, pp. 255-257
HIGH-QUALITY 0.98-MU-M GAINAS GAAS/GAINP LASERS GROWN BY CBE USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE/
Authors: GARCIA JC MAUREL P HIRTZ JP
Citation: Jc. Garcia et al., HIGH-QUALITY 0.98-MU-M GAINAS GAAS/GAINP LASERS GROWN BY CBE USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE/, Electronics Letters, 29(5), 1993, pp. 432-433
ROOM-TEMPERATURE 600MW CW OUTPUT POWER PER FACET FROM SINGLE GAINAS GAAS/GAINP LARGE-AREA LASER-DIODE GROWN BY CBE/
Authors: MAUREL P GARCIA JC REGRENY P HIRTZ JP VASSILAKIS E PARENT A BALDY M CARRIERE C
Citation: P. Maurel et al., ROOM-TEMPERATURE 600MW CW OUTPUT POWER PER FACET FROM SINGLE GAINAS GAAS/GAINP LARGE-AREA LASER-DIODE GROWN BY CBE/, Electronics Letters, 29(1), 1993, pp. 91-93
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