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Results: 1-17 |
Results: 17
PHYSICAL VAPOR TRANSPORT GROWTH AND PROPERTIES OF SIC MONOCRYSTALS OF4H POLYTYPE
Authors: AUGUSTINE G HOBGOOD HM BALAKRISHNA V DUNNE G HOPKINS RH
Citation: G. Augustine et al., PHYSICAL VAPOR TRANSPORT GROWTH AND PROPERTIES OF SIC MONOCRYSTALS OF4H POLYTYPE, Physica status solidi. b, Basic research, 202(1), 1997, pp. 137-148
AN ATOMIC-FORCE MICROSCOPY STUDY OF SUPER-DISLOCATION MICROPIPE COMPLEXES ON THE 6H-SIC(0001) GROWTH SURFACE/
Authors: GIOCONDI J ROHRER GS SKOWRONSKI M BALAKRISHNA V AUGUSTINE G HOBGOOD HM HOPKINS RH
Citation: J. Giocondi et al., AN ATOMIC-FORCE MICROSCOPY STUDY OF SUPER-DISLOCATION MICROPIPE COMPLEXES ON THE 6H-SIC(0001) GROWTH SURFACE/, Journal of crystal growth, 181(4), 1997, pp. 351-362
BORON ACCEPTOR LEVELS IN 6H-SIC BULK SAMPLES
Authors: EVWARAYE AO SMITH SR MITCHEL WC HOBGOOD HM
Citation: Ao. Evwaraye et al., BORON ACCEPTOR LEVELS IN 6H-SIC BULK SAMPLES, Applied physics letters, 71(9), 1997, pp. 1186-1188
ELECTRICAL-PROPERTIES OF HIGH-RESISTIVITY 6H-SIC UNDER HIGH TEMPERATURE HIGH FIELD STRESS/
Authors: GRADINARU G SUDARSHAN TS GRADINARU SA MITCHELL W HOBGOOD HM
Citation: G. Gradinaru et al., ELECTRICAL-PROPERTIES OF HIGH-RESISTIVITY 6H-SIC UNDER HIGH TEMPERATURE HIGH FIELD STRESS/, Applied physics letters, 70(6), 1997, pp. 735-737
4H-SIC MESFETS WITH 42 GHZ F(MAX)
Authors: SRIRAM S AUGUSTINE G BURK AA GLASS RC HOBGOOD HM ORPHANOS PA ROWLAND LB SMITH TJ BRANDT CD DRIVER MC HOPKINS RH
Citation: S. Sriram et al., 4H-SIC MESFETS WITH 42 GHZ F(MAX), IEEE electron device letters, 17(7), 1996, pp. 369-371
OPTICAL AND ELECTRICAL CHARACTERIZATION OF BORON IMPURITIES IN SILICON-CARBIDE GROWN BY PHYSICAL VAPOR TRANSPORT
Authors: JENNY JR SKOWRONSKI M MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH
Citation: Jr. Jenny et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF BORON IMPURITIES IN SILICON-CARBIDE GROWN BY PHYSICAL VAPOR TRANSPORT, Journal of applied physics, 79(5), 1996, pp. 2326-2331
DEEP-LEVEL TRANSIENT SPECTROSCOPIC AND HALL-EFFECT INVESTIGATION OF THE POSITION OF THE VANADIUM ACCEPTOR LEVEL IN 4H AND 6H SIC
Authors: JENNY JR SKOWRONSKI J MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH
Citation: Jr. Jenny et al., DEEP-LEVEL TRANSIENT SPECTROSCOPIC AND HALL-EFFECT INVESTIGATION OF THE POSITION OF THE VANADIUM ACCEPTOR LEVEL IN 4H AND 6H SIC, Applied physics letters, 68(14), 1996, pp. 1963-1965
ON THE COMPENSATION MECHANISM IN HIGH-RESISTIVITY 6H-SIC DOPED WITH VANADIUM
Authors: JENNY JR SKOWRONSKI M MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH
Citation: Jr. Jenny et al., ON THE COMPENSATION MECHANISM IN HIGH-RESISTIVITY 6H-SIC DOPED WITH VANADIUM, Journal of applied physics, 78(6), 1995, pp. 3839-3842
VANADIUM RELATED NEAR-BAND-EDGE ABSORPTION-BANDS IN 3 SIC POLYTYPES
Authors: JENNY JR SKOWRONSKI M MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH
Citation: Jr. Jenny et al., VANADIUM RELATED NEAR-BAND-EDGE ABSORPTION-BANDS IN 3 SIC POLYTYPES, Journal of applied physics, 78(5), 1995, pp. 3160-3163
CHARACTERIZATION OF POLISHING-RELATED SURFACE DAMAGE IN (0001) SILICON-CARBIDE SUBSTRATES
Authors: QIAN W SKOWRONSKI M AUGUSTINE G GLASS RC HOBGOOD HM HOPKINS RH
Citation: W. Qian et al., CHARACTERIZATION OF POLISHING-RELATED SURFACE DAMAGE IN (0001) SILICON-CARBIDE SUBSTRATES, Journal of the Electrochemical Society, 142(12), 1995, pp. 4290-4294
SEMIINSULATING 6H-SIC GROWN BY PHYSICAL VAPOR TRANSPORT
Authors: HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH JENNY J SKOWRONSKI M MITCHEL WC ROTH M
Citation: Hm. Hobgood et al., SEMIINSULATING 6H-SIC GROWN BY PHYSICAL VAPOR TRANSPORT, Applied physics letters, 66(11), 1995, pp. 1364-1366
RF PERFORMANCE OF SIC MESFETS ON HIGH-RESISTIVITY SUBSTRATES
Authors: SRIRAM S CLARKE RC BURK AA HOBGOOD HM MCMULLIN PG ORPHANOS PA SIERGIEJ RR SMITH TJ BRANDT CD DRIVER MC HOPKINS RH
Citation: S. Sriram et al., RF PERFORMANCE OF SIC MESFETS ON HIGH-RESISTIVITY SUBSTRATES, IEEE electron device letters, 15(11), 1994, pp. 458-459
LARGE-DIAMETER 6H-SIC FOR MICROWAVE DEVICE APPLICATIONS
Authors: HOBGOOD HM BARRETT DL MCHUGH JP CLARKE RC SRIRAM S BURK AA GREGGI J BRANDT CD HOPKINS RH CHOYKE WJ
Citation: Hm. Hobgood et al., LARGE-DIAMETER 6H-SIC FOR MICROWAVE DEVICE APPLICATIONS, Journal of crystal growth, 137(1-2), 1994, pp. 181-186
MEETING DEVICE NEEDS THROUGH MELT GROWTH OF LARGE-DIAMETER ELEMENTAL AND COMPOUND SEMICONDUCTORS
Authors: THOMAS RN HOBGOOD HM RAVISHANKAR PS BRAGGINS TT
Citation: Rn. Thomas et al., MEETING DEVICE NEEDS THROUGH MELT GROWTH OF LARGE-DIAMETER ELEMENTAL AND COMPOUND SEMICONDUCTORS, Progress in crystal growth and characterization of materials, 26, 1993, pp. 219-253
MICROX (TM) - AN ALL-SILICON TECHNOLOGY FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS
Authors: HANES MH AGARWAL AK OKEEFFE TW HOBGOOD HM SZEDON JR SMITH TJ SIERGIEJ RR MCMULLIN PG NATHANSON HC DRIVER MC THOMAS RN
Citation: Mh. Hanes et al., MICROX (TM) - AN ALL-SILICON TECHNOLOGY FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS, IEEE electron device letters, 14(5), 1993, pp. 219-221
IDENTIFICATION OF THE BIGA HETEROANTISITE DEFECT IN GAAS-BI
Authors: KUNZER M JOST W KAUFMANN U HOBGOOD HM THOMAS RN
Citation: M. Kunzer et al., IDENTIFICATION OF THE BIGA HETEROANTISITE DEFECT IN GAAS-BI, Physical review. B, Condensed matter, 48(7), 1993, pp. 4437-4441
ZNGEP2 GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI METHOD
Authors: HOBGOOD HM HENNINGSEN T THOMAS RN HOPKINS RH OHMER MC MITCHEL WC FISCHER DW HEGDE SM HOPKINS FK
Citation: Hm. Hobgood et al., ZNGEP2 GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI METHOD, Journal of applied physics, 73(8), 1993, pp. 4030-4037
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