Authors: HOHENECKER S KAMPEN TU ZAHN DRT BRAUN W

Citation: S. Hohenecker et al., INFLUENCE OF SULFUR INTERLAYERS ON THE MG CAAS(100) INTERFACE FORMATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2317-2323

Authors: BESSOLOV VN LEBEDEV MV HOHENECKER S ZAHN DRT

Citation: Vn. Bessolov et al., BAND BENDING ON GAAS(100) - THE DIPOLE LAYER FORMATION ON SOLUTION PASSIVATED SURFACE, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 9-10, 1998, pp. 105-114

Authors: TAUTZ FS SLOBOSHANIN S HOHENECKER S ZAHN DRT SCHAEFER JA

Citation: Fs. Tautz et al., PHOTOELECTRON-SPECTROSCOPY AT CLEAN AND HYDROGENATED C(2X2)-SIC(100) SURFACES, Applied surface science, 123, 1998, pp. 17-21

Authors: GNOTH DN WOLFFRAMM D PATCHETT A HOHENECKER S ZAHN DRT LESLIE A MCGOVERN IT EVANS DA

Citation: Dn. Gnoth et al., A COMPARISON OF S-PASSIVATION OF III-V(001) SURFACES USING (NH4)(2)S-X AND S2CL2, Applied surface science, 123, 1998, pp. 120-125

Authors: HOHENECKER S DREWS D LUBBE M ZAHN DRT BRAUN W

Citation: S. Hohenecker et al., THE INFLUENCE OF A SELENIUM INTERLAYER ON THE IN GAAS(100) INTERFACE FORMATION/, Applied surface science, 123, 1998, pp. 585-589