Authors: PROTZMANN H HOHNSDORF F SPIKA Z STOLZ W GOBEL EO MULLER M LORBERTH J

Citation: H. Protzmann et al., PROPERTIES OF (GA0.47IN0.53) AS EPITAXIAL LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY (MOVPE) USING ALTERNATIVE ARSENIC PRECURSORS, Journal of crystal growth, 170(1-4), 1997, pp. 155-160