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Results: 1-25 |
Results: 25
ELECTROABSORPTION MODULATOR USING A TYPE-II QUANTUM-WELL IN THE INXGA1-XAS INALAS/INP SYSTEM/
Authors: LUGAND C BENYATTOU T GUILLOT G VENET T GENDRY M HOLLINGER G
Citation: C. Lugand et al., ELECTROABSORPTION MODULATOR USING A TYPE-II QUANTUM-WELL IN THE INXGA1-XAS INALAS/INP SYSTEM/, Superlattices and microstructures, 23(2), 1998, pp. 253-259
SURFACE SPINODAL DECOMPOSITION IN LOW-TEMPERATURE AL0.48IN0.52 GROWN ON INP(001) BY MOLECULAR-BEAM EPITAXY
Authors: GRENET G GENDRY M OUSTRIC M ROBACH Y PORTE L HOLLINGER G MARTY O PITAVAL M PRIESTER C
Citation: G. Grenet et al., SURFACE SPINODAL DECOMPOSITION IN LOW-TEMPERATURE AL0.48IN0.52 GROWN ON INP(001) BY MOLECULAR-BEAM EPITAXY, Applied surface science, 123, 1998, pp. 324-328
ROLE OF BUFFER SURFACE-MORPHOLOGY AND ALLOYING EFFECTS ON THE PROPERTIES OF INAS NANOSTRUCTURES GROWN ON INP(001)
Authors: BRAULT J GENDRY M GRENET G HOLLINGER G DESIERES Y BENYATTOU T
Citation: J. Brault et al., ROLE OF BUFFER SURFACE-MORPHOLOGY AND ALLOYING EFFECTS ON THE PROPERTIES OF INAS NANOSTRUCTURES GROWN ON INP(001), Applied physics letters, 73(20), 1998, pp. 2932-2934
ROLE OF SURFACE-ENERGY AND SURFACE RECONSTRUCTIONS ON THE 2D-TO-3D GROWTH-MODE TRANSITION OF STRAINED INXGA1-XAS LAYERS ON INP(001)
Authors: GENDRY M GRENET G ROBACH Y KRAPF P PORTE L HOLLINGER G
Citation: M. Gendry et al., ROLE OF SURFACE-ENERGY AND SURFACE RECONSTRUCTIONS ON THE 2D-TO-3D GROWTH-MODE TRANSITION OF STRAINED INXGA1-XAS LAYERS ON INP(001), Physical review. B, Condensed matter, 56(15), 1997, pp. 9271-9274
TYPE-II RECOMBINATION AND BAND-OFFSET DETERMINATION IN A TENSILE-STRAINED INGAAS QUANTUM-WELL
Authors: LUGAND C BENYATTOU T GUILLOT G VENET T GENDRY M HOLLINGER G SERMAGE B
Citation: C. Lugand et al., TYPE-II RECOMBINATION AND BAND-OFFSET DETERMINATION IN A TENSILE-STRAINED INGAAS QUANTUM-WELL, Applied physics letters, 70(24), 1997, pp. 3257-3259
APPLICATION OF SPECTRALLY RESOLVED SCANNING PHOTOLUMINESCENCE TO ASSESS RELAXATION PROCESSES OF INGAAS AND INALAS LAYERS STRAINED IN COMPRESSION AND TENSION
Authors: KRAWCZYK SK GENDRY M KLINGELHOFER C VENET T BUCHHEIT M BLANCHET R HOLLINGER G
Citation: Sk. Krawczyk et al., APPLICATION OF SPECTRALLY RESOLVED SCANNING PHOTOLUMINESCENCE TO ASSESS RELAXATION PROCESSES OF INGAAS AND INALAS LAYERS STRAINED IN COMPRESSION AND TENSION, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 146-152
HIGHLY SENSITIVE IN0.75GA0.25AS ALINAS HALL SENSORS/
Authors: DELMEDICO S BENYATTOU T GUILLOT G GENDRY M OUSTRIC M VENET T TARDY J HOLLINGER G CHOVET A MATHIEU N
Citation: S. Delmedico et al., HIGHLY SENSITIVE IN0.75GA0.25AS ALINAS HALL SENSORS/, Semiconductor science and technology, 11(4), 1996, pp. 576-581
SCANNING-TUNNELING-MICROSCOPY STUDY OF THE EPITAXIAL-GROWTH OF STRAINED IN0.82GA0.18AS LAYERS ON INP
Authors: PORTE L KRAPF P ROBACH Y PHANER M GENDRY M HOLLINGER G
Citation: L. Porte et al., SCANNING-TUNNELING-MICROSCOPY STUDY OF THE EPITAXIAL-GROWTH OF STRAINED IN0.82GA0.18AS LAYERS ON INP, Surface science, 352, 1996, pp. 60-65
IN-SITU XPS INVESTIGATION OF INDIUM SURFACE SEGREGATION FOR GA1-XINXAS AND AL1-XINXAS ALLOYS GROWN BY MBE ON INP(001)
Authors: GRENET G BERGIGNAT E GENDRY M LAPEYRADE M HOLLINGER G
Citation: G. Grenet et al., IN-SITU XPS INVESTIGATION OF INDIUM SURFACE SEGREGATION FOR GA1-XINXAS AND AL1-XINXAS ALLOYS GROWN BY MBE ON INP(001), Surface science, 352, 1996, pp. 734-739
OPTIMIZED SIO2 INP STRUCTURES PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA/
Authors: BESLAND MP JOURBA S LAMBRINOS M LOUIS P VIKTOROVITCH P HOLLINGER G
Citation: Mp. Besland et al., OPTIMIZED SIO2 INP STRUCTURES PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA/, Journal of applied physics, 80(5), 1996, pp. 3100-3109
DESIGN AND GROWTH INVESTIGATIONS OF STRAINED INXGA1-XAS INALAS/INP HETEROSTRUCTURES FOR HIGH-ELECTRON-MOBILITY TRANSISTOR APPLICATION/
Authors: DROUOT V GENDRY M SANTINELLI C LETARTE X TARDY J VIKTOROVITCH P HOLLINGER G AMBRI M PITAVAL M
Citation: V. Drouot et al., DESIGN AND GROWTH INVESTIGATIONS OF STRAINED INXGA1-XAS INALAS/INP HETEROSTRUCTURES FOR HIGH-ELECTRON-MOBILITY TRANSISTOR APPLICATION/, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1326-1335
MEASUREMENT OF THE EXTENT OF STRAIN RELIEF IN INGAAS LAYERS GROWN UNDER TENSILE STRAIN ON INP(100) SUBSTRATES
Authors: MAIGNE P GENDRY M VENET T TAHRI Y HOLLINGER G
Citation: P. Maigne et al., MEASUREMENT OF THE EXTENT OF STRAIN RELIEF IN INGAAS LAYERS GROWN UNDER TENSILE STRAIN ON INP(100) SUBSTRATES, Applied physics letters, 69(5), 1996, pp. 682-684
PHYSICOCHEMICAL AND STRUCTURAL STUDY OF V ERY THIN SILICON-NITRIDE AND OXYNITRIDE FORMED BY RAPID THERMAL-TREATMENT
Authors: SAOUDI R HOLLINGER G GAGNAIRE A PITAVAL M MOLLE P
Citation: R. Saoudi et al., PHYSICOCHEMICAL AND STRUCTURAL STUDY OF V ERY THIN SILICON-NITRIDE AND OXYNITRIDE FORMED BY RAPID THERMAL-TREATMENT, Journal de physique. III, 5(5), 1995, pp. 557-573
HIGH-SENSITIVITY HALL SENSORS USING GAINAS ALINAS PSEUDOMORPHIC HETEROSTRUCTURES/
Authors: DELMEDICO S BENYATTOU T GUILLOT G GENDRY M OUSTRIC M VENET T TARDY J HOLLINGER G CHOVET A MATHIEU N
Citation: S. Delmedico et al., HIGH-SENSITIVITY HALL SENSORS USING GAINAS ALINAS PSEUDOMORPHIC HETEROSTRUCTURES/, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 298-301
SURFACE-CHEMISTRY OF INALAS AFTER (NH4)(2)S(X)
Authors: LECLERCQ JL BERGIGNAT E HOLLINGER G
Citation: Jl. Leclercq et al., SURFACE-CHEMISTRY OF INALAS AFTER (NH4)(2)S(X), Semiconductor science and technology, 10(1), 1995, pp. 95-100
EVIDENCE FOR INHOMOGENEOUS GROWTH-RATES IN PARTIALLY RELAXED INGAAS INP HETEROSTRUCTURES/
Authors: GENDRY M PORTE L HOLLINGER G LOUBET JL MIOSSI C PITAVAL M
Citation: M. Gendry et al., EVIDENCE FOR INHOMOGENEOUS GROWTH-RATES IN PARTIALLY RELAXED INGAAS INP HETEROSTRUCTURES/, Journal of applied physics, 78(5), 1995, pp. 3138-3143
HIGH-ELECTRON-MOBILITY IN PSEUDOMORPHIC MODULATION-DOPED IN0.75GA0.25AS INALAS HETEROSTRUCTURES ACHIEVED WITH GROWTH INTERRUPTIONS/
Authors: DROUOT V GENDRY M SANTINELLI C VIKTOROVITCH P HOLLINGER G ELLEUCH S PELOUARD JL
Citation: V. Drouot et al., HIGH-ELECTRON-MOBILITY IN PSEUDOMORPHIC MODULATION-DOPED IN0.75GA0.25AS INALAS HETEROSTRUCTURES ACHIEVED WITH GROWTH INTERRUPTIONS/, Journal of applied physics, 77(4), 1995, pp. 1810-1812
DESORPTION OF ULTRAVIOLET-OZONE OXIDES FROM INP UNDER PHOSPHORUS AND ARSENIC OVERPRESSURES
Authors: HOFSTRA PG THOMPSON DA ROBINSON BJ BESLAND MP GENDRY M REGRENY P HOLLINGER G
Citation: Pg. Hofstra et al., DESORPTION OF ULTRAVIOLET-OZONE OXIDES FROM INP UNDER PHOSPHORUS AND ARSENIC OVERPRESSURES, Journal of applied physics, 77(10), 1995, pp. 5167-5172
EFFECT OF SURFACE STEPS AND NONSTOICHIOMETRY ON CRITICAL THICKNESS OFSTRAINED INGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON INALAS INP HETEROSTRUCTURES/
Authors: GENDRY M DROUOT V HOLLINGER G MAHAJAN S
Citation: M. Gendry et al., EFFECT OF SURFACE STEPS AND NONSTOICHIOMETRY ON CRITICAL THICKNESS OFSTRAINED INGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON INALAS INP HETEROSTRUCTURES/, Applied physics letters, 66(1), 1995, pp. 40-42
LOCAL ORDER IN SILICON OXINITRIDE INVESTI GATED BY X-RAY PHOTOELECTRON-SPECTROSCOPY
Authors: SAOUDI R HOLLINGER G STRABONI A
Citation: R. Saoudi et al., LOCAL ORDER IN SILICON OXINITRIDE INVESTI GATED BY X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal de physique. III, 4(5), 1994, pp. 881-897
OPTICAL-PROPERTIES OF INAS INP SURFACE-LAYERS FORMED DURING THE ARSENIC STABILIZATION PROCESS/
Authors: TABATA A BENYATTOU T GUILLOT G GENDRY M HOLLINGER G VIKTOROVITCH P
Citation: A. Tabata et al., OPTICAL-PROPERTIES OF INAS INP SURFACE-LAYERS FORMED DURING THE ARSENIC STABILIZATION PROCESS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2299-2304
STRAINED-LAYER EPITAXY - HOW DO CAPPING LAYERS AND OPPOSITELY STRAINED INTERMEDIATE LAYERS ENHANCE THE CRITICAL THICKNESS
Authors: LEFEBVRE I PRIESTER C LANNOO M HOLLINGER G
Citation: I. Lefebvre et al., STRAINED-LAYER EPITAXY - HOW DO CAPPING LAYERS AND OPPOSITELY STRAINED INTERMEDIATE LAYERS ENHANCE THE CRITICAL THICKNESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2527-2531
X-RAY-PHOTOELECTRON-DIFFRACTION STUDY OF INAS INP(001) HETEROSTRUCTURES/
Authors: BERGIGNAT E GENDRY M HOLLINGER G GRENET G
Citation: E. Bergignat et al., X-RAY-PHOTOELECTRON-DIFFRACTION STUDY OF INAS INP(001) HETEROSTRUCTURES/, Physical review. B, Condensed matter, 49(19), 1994, pp. 13542-13553
OXIDES ON GAAS AND INAS SURFACES - AN X-RAY-PHOTOELECTRON-SPECTROSCOPY STUDY OF REFERENCE COMPOUNDS AND THIN OXIDE LAYERS
Authors: HOLLINGER G SKHEYTAKABBANI R GENDRY M
Citation: G. Hollinger et al., OXIDES ON GAAS AND INAS SURFACES - AN X-RAY-PHOTOELECTRON-SPECTROSCOPY STUDY OF REFERENCE COMPOUNDS AND THIN OXIDE LAYERS, Physical review. B, Condensed matter, 49(16), 1994, pp. 11159-11167
VERY THIN SILICON DIOXIDE FILM THICKNESS DETERMINATION USING TRANSMISSION ELECTRON-MICROSCOPY, SPECTROSCOPIC ELLIPSOMETRY AND X-RAY PHOTOELECTRON-SPECTROSCOPY
Authors: SAOUDI R HOLLINGER G GAGNAIRE A FERRET P PITAVAL M
Citation: R. Saoudi et al., VERY THIN SILICON DIOXIDE FILM THICKNESS DETERMINATION USING TRANSMISSION ELECTRON-MICROSCOPY, SPECTROSCOPIC ELLIPSOMETRY AND X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal de physique. III, 3(7), 1993, pp. 1479-1488
Risultati: 1-25 |