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Results:
1-8
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Results: 8
Authors:
LEONHARDT D
EDDY CR
SHAMAMIAN VA
HOLM RT
GLEMBOCKI OJ
THOMS DB
KATZER DS
BUTLER JE
Citation: D. Leonhardt et al., ION ENERGY EFFECTS ON SURFACE-CHEMISTRY AND DAMAGE IN A HIGH-DENSITY PLASMA ETCH PROCESS FOR GALLIUM-ARSENIDE, JPN J A P 2, 37(5B), 1998, pp. 577-579
Authors:
LEONHARDT D
EDDY CR
SHAMAMIAN VA
HOLM RT
GLEMBOCKI OJ
BUTLER JE
Citation: D. Leonhardt et al., SURFACE-CHEMISTRY AND DAMAGE IN THE HIGH-DENSITY PLASMA-ETCHING OF GALLIUM-ARSENIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1547-1551
GALLIUM-ARSENIDE SURFACE-CHEMISTRY AND SURFACE DAMAGE IN A CHLORINE HIGH-DENSITY PLASMA ETCH PROCESS
Authors:
EDDY CR
GLEMBOCKI OJ
LEONHARDT D
SHAMAMIAN VA
HOLM RT
THOMS BD
BUTLER JE
PANG SW
Citation: Cr. Eddy et al., GALLIUM-ARSENIDE SURFACE-CHEMISTRY AND SURFACE DAMAGE IN A CHLORINE HIGH-DENSITY PLASMA ETCH PROCESS, Journal of electronic materials, 26(11), 1997, pp. 1320-1325
Authors:
JONKER BT
GLEMBOCKI OJ
HOLM RT
WAGNER RJ
Citation: Bt. Jonker et al., ENHANCED CARRIER LIFETIMES AND SUPPRESSION OF MIDGAP STATES IN GAAS AT A MAGNETIC METAL INTERFACE, Physical review letters, 79(24), 1997, pp. 4886-4889
Authors:
MOORE WJ
HOLM RT
Citation: Wj. Moore et Rt. Holm, INFRARED DIELECTRIC-CONSTANT OF GALLIUM-ARSENIDE (VOL 80, PG 6939, 1996), Journal of applied physics, 81(8), 1997, pp. 3732-3732
Authors:
MOORE WJ
HOLM RT
Citation: Wj. Moore et Rt. Holm, INFRARED DIELECTRIC-CONSTANT OF GALLIUM-ARSENIDE, Journal of applied physics, 80(12), 1996, pp. 6939-6942
Authors:
MOORE WJ
HOLM RT
YANG MJ
FREITAS JA
Citation: Wj. Moore et al., INFRARED DIELECTRIC-CONSTANT OF CUBIC SIC, Journal of applied physics, 78(12), 1995, pp. 7255-7258
Authors:
CUKAUSKAS EJ
ALLEN LH
SHERRILL GK
HOLM RT
VOLD C
Citation: Ej. Cukauskas et al., MORPHOLOGY AND TRANSPORT OF YBA2CU3O7-X SPUTTERED IN ARGON, OXYGEN, AND HYDROGEN - DEPENDENCE ON DEPOSITION TEMPERATURE, Journal of applied physics, 74(11), 1993, pp. 6780-6787
Risultati:
1-8
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