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Results: 1-14 |
Results: 14
GOLD CLUSTERS AND COLLOIDS IN ALUMINA NANOTUBES
Authors: HORNYAK G KROLL M PUGIN R SAWITOWSKI T SCHMID G BOVIN JO KARSSON G HOFMEISTER H HOPFE S
Citation: G. Hornyak et al., GOLD CLUSTERS AND COLLOIDS IN ALUMINA NANOTUBES, Chemistry, 3(12), 1997, pp. 1951-1956
CHARACTERIZATION OF BURIED INTERFACES BY MULTIPLE INTERNAL-REFLECTIONSPECTROSCOPY (MIRS)
Authors: REICHE M HOPFE S GOSELE U TONG QY
Citation: M. Reiche et al., CHARACTERIZATION OF BURIED INTERFACES BY MULTIPLE INTERNAL-REFLECTIONSPECTROSCOPY (MIRS), Mikrochimica acta, 125(1-4), 1997, pp. 367-373
GROWTH OF BURIED OXIDE LAYERS OF SILICON-ON-INSULATOR STRUCTURES BY THERMAL-OXIDATION OF THE TOP SILICON LAYER
Authors: SCHROER E HOPFE S TONG QY GOSELE U SKORUPA W
Citation: E. Schroer et al., GROWTH OF BURIED OXIDE LAYERS OF SILICON-ON-INSULATOR STRUCTURES BY THERMAL-OXIDATION OF THE TOP SILICON LAYER, Journal of the Electrochemical Society, 144(6), 1997, pp. 2205-2210
OXIDE PRECIPITATION AT SILICON GRAIN-BOUNDARIES
Authors: SCHROER E HOPFE S WERNER P GOSELE U DUSCHER G RUHLE M TAN TY
Citation: E. Schroer et al., OXIDE PRECIPITATION AT SILICON GRAIN-BOUNDARIES, Applied physics letters, 70(3), 1997, pp. 327-329
LAYER SPLITTING PROCESS IN HYDROGEN-IMPLANTED SI, GE, SIC, AND DIAMOND SUBSTRATES
Authors: TONG QY GUTJAHR K HOPFE S GOSELE U LEE TH
Citation: Qy. Tong et al., LAYER SPLITTING PROCESS IN HYDROGEN-IMPLANTED SI, GE, SIC, AND DIAMOND SUBSTRATES, Applied physics letters, 70(11), 1997, pp. 1390-1392
A THERMODYNAMIC MODEL FOR THE GROWTH OF BURIED OXIDE LAYERS BY THERMAL-OXIDATION
Authors: SCHROER E HOPFE S HUH JY GOSELE U
Citation: E. Schroer et al., A THERMODYNAMIC MODEL FOR THE GROWTH OF BURIED OXIDE LAYERS BY THERMAL-OXIDATION, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 237-240
MULTIPLE INTERNAL-REFLECTION SPECTROSCOPY OF BONDED SILICON-WAFERS
Authors: REICHE M HOPFE S GOSELE U TONG QY
Citation: M. Reiche et al., MULTIPLE INTERNAL-REFLECTION SPECTROSCOPY OF BONDED SILICON-WAFERS, Applied physics A: Materials science & processing, 61(2), 1995, pp. 101-105
INVESTIGATION OF THE THERMAL-STABILITY OF NI C MULTILAYERS BY X-RAY-METHODS/
Authors: KRAWIETZ R WEHNER B MEYER D RICHTER K MAI H DIETSCH R HOPFE S SCHOLZ R POMPE W
Citation: R. Krawietz et al., INVESTIGATION OF THE THERMAL-STABILITY OF NI C MULTILAYERS BY X-RAY-METHODS/, Fresenius' journal of analytical chemistry, 353(3-4), 1995, pp. 246-250
CHARACTERIZATION OF ULTRA SMOOTH INTERFACES IN MO SI-MULTILAYERS/
Authors: DIETSCH R HOLT T HOPFE S MAI H SCHOLZ R SCHONEICH B WENDROCK H
Citation: R. Dietsch et al., CHARACTERIZATION OF ULTRA SMOOTH INTERFACES IN MO SI-MULTILAYERS/, Fresenius' journal of analytical chemistry, 353(3-4), 1995, pp. 383-388
WHAT DETERMINES THE LATERAL BONDING SPEED IN SILICON-WAFER BONDING
Authors: GOSELE U HOPFE S LI S MACK S MARTINI T REICHE M SCHMIDT E STENZEL H TONG QY
Citation: U. Gosele et al., WHAT DETERMINES THE LATERAL BONDING SPEED IN SILICON-WAFER BONDING, Applied physics letters, 67(6), 1995, pp. 863-865
INTERFACE STABILITY AND SILICIDE FORMATION IN HIGH-TEMPERATURE STABLEMOXSI1-X SI MULTILAYER SOFT-X-RAY MIRRORS STUDIED BY MEANS OF X-RAY-DIFFRACTION AND HRTEM/
Authors: KLEINEBERG U STOCK HJ KLOIDT A SCHMIEDESKAMP B HEINZMANN U HOPFE S SCHOLZ R
Citation: U. Kleineberg et al., INTERFACE STABILITY AND SILICIDE FORMATION IN HIGH-TEMPERATURE STABLEMOXSI1-X SI MULTILAYER SOFT-X-RAY MIRRORS STUDIED BY MEANS OF X-RAY-DIFFRACTION AND HRTEM/, Physica status solidi. a, Applied research, 145(2), 1994, pp. 539-550
OBSERVATION OF LATENT HEAVY-ION TRACKS IN GES BY TRANSMISSION ELECTRON-MICROSCOPY
Authors: SCHOLZ R VETTER J HOPFE S
Citation: R. Scholz et al., OBSERVATION OF LATENT HEAVY-ION TRACKS IN GES BY TRANSMISSION ELECTRON-MICROSCOPY, Radiation effects and defects in solids, 126(1-4), 1993, pp. 275-278
CHARACTERIZATION OF MULTILAYER-INTERFACES BY X-RAY-DIFFRACTION, TEM, SNMS AND AES
Authors: HOPFE S KALLIS N MAI H POMPE W SCHOLZ R VOLLMAR S WEHNER B WEISSBROT P
Citation: S. Hopfe et al., CHARACTERIZATION OF MULTILAYER-INTERFACES BY X-RAY-DIFFRACTION, TEM, SNMS AND AES, Fresenius' journal of analytical chemistry, 346(1-3), 1993, pp. 14-22
STRESS-INDUCED VOID FORMATION IN INTERLEVEL POLYSILICON FILMS DURING POLYBUFFERED LOCAL OXIDATION OF SILICON
Authors: NAGEL J REICHE M HOPFE S KATZER D
Citation: J. Nagel et al., STRESS-INDUCED VOID FORMATION IN INTERLEVEL POLYSILICON FILMS DURING POLYBUFFERED LOCAL OXIDATION OF SILICON, Journal of the Electrochemical Society, 140(8), 1993, pp. 2356-2359
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