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Results: 1-25 | 26-50 | 51-75 | 76-78 |
Results: 76-78/78
THE BANDGAP-SELECTIVE PHOTOELECTROCHEMICAL ETCHING OF GAAS ALXGA1-XASHETEROSTRUCTURES WITH VARYING MOLE FRACTION/
Authors: KHARE R YOUNG DB HU EL
Citation: R. Khare et al., THE BANDGAP-SELECTIVE PHOTOELECTROCHEMICAL ETCHING OF GAAS ALXGA1-XASHETEROSTRUCTURES WITH VARYING MOLE FRACTION/, Journal of the Electrochemical Society, 140(7), 1993, pp. 120000117-120000118
EFFECTS OF HYDROGEN ON CHLORINE RADICAL-BEAM ION-BEAM ETCHING OF ALXGA1-XAS WITH VARYING MOLE FRACTION
Authors: SKIDMORE JA LISHAN DG YOUNG DB HU EL COLDREN LA
Citation: Ja. Skidmore et al., EFFECTS OF HYDROGEN ON CHLORINE RADICAL-BEAM ION-BEAM ETCHING OF ALXGA1-XAS WITH VARYING MOLE FRACTION, Journal of the Electrochemical Society, 140(6), 1993, pp. 1802-1804
MINIMUM THICKNESS MGO BUFFER LAYERS FOR YBA2CU3O7-X GAAS STRUCTURES -ASSESSMENT USING PHOTOLUMINESCENCE OF MULTIPLE-QUANTUM-WELL STRUCTURES/
Authors: TSENG MZ HU SY CHANG YL JIANG WN HU EL
Citation: Mz. Tseng et al., MINIMUM THICKNESS MGO BUFFER LAYERS FOR YBA2CU3O7-X GAAS STRUCTURES -ASSESSMENT USING PHOTOLUMINESCENCE OF MULTIPLE-QUANTUM-WELL STRUCTURES/, Applied physics letters, 63(7), 1993, pp. 987-989
Risultati: 1-25 | 26-50 | 51-75 | 76-78 |