Authors:
HAO MS
LIANG JW
ZHENG LX
DENG LS
XIAO ZB
HU XW
Citation: Ms. Hao et al., PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER (VOL 34, PG L900, 1995)/, JPN J A P 2, 34(10B), 1995, pp. 1423-1423
Citation: Xw. Hu et Y. Chen, MECHANISM OF LOW-PRESSURE DC BREAKDOWN IN A THERMO-CATHODE GAS-DISCHARGE, Chinese Physics Letters, 10(7), 1993, pp. 417-420
Authors:
JIN SX
WANG HP
YUAN MH
SONG HZ
WANG H
MAO WL
QIN GG
REN ZY
LI BC
HU XW
SUN GS
Citation: Sx. Jin et al., CONTROLLING OF SCHOTTKY-BARRIER HEIGHTS FOR AU N-GAAS AND TI/N-GAAS WITH HYDROGEN INTRODUCED AFTER METAL-DEPOSITION BY BIAS ANNEALING/, Applied physics letters, 62(21), 1993, pp. 2719-2721