Authors: OSWALD JE KOCH T MEHDI I PEASE A DENGLER RJ LEE TH HUMPHREY DA KIM M SIEGEL PH FRERKING MA ERICKSON NR

Citation: Je. Oswald et al., PLANAR DIODE SOLID-STATE RECEIVER FOR 557 GHZ WITH STATE-OF-THE-ART PERFORMANCE, IEEE microwave and guided wave letters, 8(6), 1998, pp. 232-234

Authors: LIN J CHEN YK HUMPHREY DA HAMM RA MALIK RJ TATE A KOPF RF RYAN RW

Citation: J. Lin et al., KA-BAND MONOLITHIC INGAAS INP HBT VCOS IN CPW STRUCTURE/, IEEE microwave and guided wave letters, 5(11), 1995, pp. 379-381

Authors: HWANG WY MILLER DL CHEN YK HUMPHREY DA

Citation: Wy. Hwang et al., CARBON DOPING OF INGAAS IN SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING CARBON TETRABROMIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1193-1196

Authors: CHEN YK KAPRE R TSANG WT TATE A HUMPHREY DA FAN L

Citation: Yk. Chen et al., CARBON-DOPED INGAP GAAS/INGAP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A VERY-LOW 1/F NOISE CORNER FREQUENCY OF 108 KHZ GROWN BY CHEMICAL BEAM EPITAXY/, Journal of crystal growth, 136(1-4), 1994, pp. 221-224

Authors: WITMER SB MITTLEMAN SD LEHY D REN F FULLOWAN TR KOPF RF ABERNATHY CR PEARTON SJ HUMPHREY DA MONTGOMERY RK SMITH PR KRESKOVSKY JP GRUBIN HL

Citation: Sb. Witmer et al., THE EFFECTS OF IONIZING-RADIATION ON GAAS ALGAAS AND INGAAS ALINAS HETEROJUNCTION BIPOLAR-TRANSISTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(3), 1993, pp. 280-291