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Results:
1-7
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Results: 7
Authors:
LEE NI
LEE JW
HUR SH
KIM HS
HAN CH
Citation: Ni. Lee et al., EFFECT OF BOTTOM POLYSILICON DOPING ON THE RELIABILITY OF INTERPOLYOXIDE GROWN USING ELECTRON-CYCLOTRON-RESONANCE N2O-PLASMA, JPN J A P 1, 37(3B), 1998, pp. 1125-1128
Authors:
HUR SH
LEE JK
PARK KW
HONG KS
PARK SJ
Citation: Sh. Hur et al., RELATIONSHIP BETWEEN MICROSTRUCTURE AND PROPERTIES OF SEMI-CONDUCTINGBARIUM-TITANATE PREPARED BY A SEMI-ALKOXIDE ROUTE, Materials letters, 35(1-2), 1998, pp. 78-84
Authors:
HUR SH
LEE JK
HONG KS
PARK SJ
Citation: Sh. Hur et al., INCORPORATION PHENOMENA OF DONOR DOPANT IN BATIO3 SYSTEMS, Solid state ionics, 108(1-4), 1998, pp. 81-84
Authors:
HUR SH
HAN CH
Citation: Sh. Hur et Ch. Han, NONVOLATILE SRAM CELL USING DIFFERENT CAPACITANCE LOADING, Electronics Letters, 34(3), 1998, pp. 251-253
Authors:
LEE NI
LEE JW
HUR SH
KIM HS
HAN CH
Citation: Ni. Lee et al., HIGHLY RELIABLE POLYSILICON OXIDE GROWN BY ELECTRON-CYCLOTRON-RESONANCE NITROUS-OXIDE PLASMA, IEEE electron device letters, 18(10), 1997, pp. 486-488
Authors:
LEE JW
LEE NI
HUR SH
HAN CH
Citation: Jw. Lee et al., OXIDATION OF SILICON USING ELECTRON-CYCLOTRON-RESONANCE NITROUS-OXIDEPLASMA AND ITS APPLICATION TO POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Journal of the Electrochemical Society, 144(9), 1997, pp. 3283-3287
Authors:
CHOI DS
HUR SH
YANG GY
HAN CH
KIM CK
Citation: Ds. Choi et al., SUPPRESSION OF LEAKAGE CURRENT IN N-CHANNEL POLYSILICON THIN-FILM TRANSISTORS USING NH3 ANNEALING, JPN J A P 1, 34(2B), 1995, pp. 882-885
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1-7
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