Authors: Haegel, NM Palmieri, DR White, AM

Citation: Nm. Haegel et al., Current transients in extrinsic photoconductors: comprehensive analytical description of initial response, APPL PHYS A, 73(4), 2001, pp. 433-439

Authors: Haegel, NM Schwartz, WR Zinter, J White, AM Beeman, JW

Citation: Nm. Haegel et al., Origin of the hook effect in extrinsic photoconductors, APPL OPTICS, 40(31), 2001, pp. 5748-5754

Authors: Haegel, NM

Citation: Nm. Haegel, Semiconductor photoconductors for visible to far-infrared detection, PHOTODETECTORS AND FIBER OPTICS, 2001, pp. 1-96

Authors: Haegel, NM Jacobs, JE White, AM

Citation: Nm. Haegel et al., Modeling of steady-state field distributions in blocked impurity band detectors, APPL PHYS L, 77(26), 2000, pp. 4389-4391

Authors: Record, KA Palmieri, DR Haegel, NM Wynne, D

Citation: Ka. Record et al., Imaging near-contact transport in the planar-collector geometry for a Schottky contact on high-purity GaAs, APPL PHYS L, 75(24), 1999, pp. 3829-3831

Authors: Haegel, NM Simoes, JC White, AM Beeman, JW

Citation: Nm. Haegel et al., Transient behavior of infrared photoconductors: application of a numericalmodel, APPL OPTICS, 38(10), 1999, pp. 1910-1919