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Results:
1-7
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Results: 7
Authors:
Haffouz, S
Kirilyuk, V
Hageman, PR
Macht, L
Weyher, JL
Larsen, PK
Citation: S. Haffouz et al., Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment, APPL PHYS L, 79(15), 2001, pp. 2390-2392
Authors:
de Mierry, P
Lahreche, H
Haffouz, S
Vennegues, P
Beaumont, B
Omnes, F
Gibart, P
Citation: P. De Mierry et al., Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation., MAT SCI E B, 59(1-3), 1999, pp. 24-28
Authors:
Nataf, G
Beaumont, B
Bouille, A
Vennegues, P
Haffouz, S
Vaille, M
Gibart, P
Citation: G. Nataf et al., High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy, MAT SCI E B, 59(1-3), 1999, pp. 112-116
Authors:
Omnes, F
Marenco, N
Haffouz, S
Lahreche, H
de Mierry, P
Beaumont, B
Hageman, P
Monroy, E
Calle, F
Munoz, E
Citation: F. Omnes et al., Low pressure MOVPE grown AlGaN for UV photodetector applications, MAT SCI E B, 59(1-3), 1999, pp. 401-406
Authors:
Boufaden, T
Rebey, A
Halidou, I
Chine, Z
Haffouz, S
El Jani, B
Citation: T. Boufaden et al., The GaN growth by a hot filament metalorganic vapor phase deposition technique, PHYS ST S-A, 176(1), 1999, pp. 411-414
Authors:
Haffouz, S
Beaumont, B
Vennegues, P
Gibart, P
Citation: S. Haffouz et al., Optimization of Si/N treatment time of sapphire surface and its effect on the MOVPE GaN overlayers, PHYS ST S-A, 176(1), 1999, pp. 677-681
Authors:
Haffouz, S
Lahreche, H
Vennegues, P
de Mierry, P
Beaumont, B
Omnes, F
Gibart, P
Citation: S. Haffouz et al., The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy, APPL PHYS L, 73(9), 1998, pp. 1278-1280
Risultati:
1-7
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