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Results:
1-3
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Results: 3
AlxGa1-xN/GaN band offsets determined by deep-level emission
Authors:
Hang, DR Chen, CH Chen, YF Jiang, HX Lin, JY
Citation:
Dr. Hang et al., AlxGa1-xN/GaN band offsets determined by deep-level emission, J APPL PHYS, 90(4), 2001, pp. 1887-1890
Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction
Authors:
Hang, DR Liang, CT Huang, CF Chang, YH Chen, YF Jiang, HX Lin, JY
Citation:
Dr. Hang et al., Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction, APPL PHYS L, 79(1), 2001, pp. 66-68
Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well
Authors:
Hang, DR Chen, YF Fang, FF Wang, WI
Citation:
Dr. Hang et al., Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well, PHYS REV B, 60(19), 1999, pp. 13318-13321
Risultati:
1-3
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