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Results:
1-11
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Results: 11
Authors:
Aperathitis, E
Varonides, AC
Scott, CG
Sand, D
Foukaraki, V
Androulidaki, M
Hatzopoulos, Z
Panayotatos, P
Citation: E. Aperathitis et al., Temperature dependence of photocurrent components on enhanced performance GaAs/AlGaAs multiple quantum well solar cells, SOL EN MAT, 70(1), 2001, pp. 49-69
Authors:
Cengher, D
Aperathitis, E
Androulidaki, M
Deligeorgis, G
Kayambaki, M
Hatzopoulos, Z
Tzanetakis, P
Georgakilas, A
Citation: D. Cengher et al., Evaluation of performance capabilities of emitters and detectors based on a common MQW structure, MAT SCI E B, 80(1-3), 2001, pp. 241-244
Authors:
Ruzinsky, M
Saly, V
Aperathitis, E
Hatzopoulos, Z
Citation: M. Ruzinsky et al., Characterisation of selected GaAs thin film photovoltaic structures for concentrators, ACT PHYS SL, 51(1), 2001, pp. 45-52
Authors:
Jacobson, MA
Konstantinov, OV
Nelson, DK
Romanovskii, SO
Hatzopoulos, Z
Citation: Ma. Jacobson et al., Absorption spectra of GaN: film characterization by Urbach spectral tail and the effect of electric field, J CRYST GR, 230(3-4), 2001, pp. 459-461
Authors:
Hatzopoulos, Z
Cengher, D
Deligeorgis, G
Androulidaki, M
Aperathitis, E
Halkias, G
Georgakilas, A
Citation: Z. Hatzopoulos et al., Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding, J CRYST GR, 227, 2001, pp. 193-196
Authors:
Georgakilas, A
Amimer, K
Tzanetakis, P
Hatzopoulos, Z
Cengher, M
Pecz, B
Czigany, Z
Toth, L
Baidakova, MV
Sakharov, AV
Davydov, VY
Citation: A. Georgakilas et al., Correlation of the structural and optical properties of GaN grown on vicinal (001) GaAs substrates with the plasma-assisted MBE growth conditions, J CRYST GR, 227, 2001, pp. 410-414
Authors:
Loukakos, PA
Kalpouzos, C
Perakis, IE
Hatzopoulos, Z
Logaki, M
Fotakis, C
Citation: Pa. Loukakos et al., Ultrafast electron trapping times in low-temperature-grown gallium arsenide: The effect of the arsenic precipitate spacing and size, APPL PHYS L, 79(18), 2001, pp. 2883-2885
Authors:
Lalinsky, T
Burian, E
Drzik, M
Hascik, S
Mozolova, Z
Kuzmik, J
Hatzopoulos, Z
Citation: T. Lalinsky et al., Performance of GaAs micromachined microactuator, SENS ACTU-A, 85(1-3), 2000, pp. 365-370
Authors:
Papastamatiou, M
Arpatzanis, N
Papaioannou, GJ
Constantinides, G
Michelakis, C
Hatzopoulos, Z
Citation: M. Papastamatiou et al., On the alpha-particle irradiation effects in MESFETs, PHYS ST S-A, 180(2), 2000, pp. 569-584
Authors:
Georgakilas, A
Michelakis, K
Kayambaki, M
Tsagaraki, K
Macarona, E
Hatzopoulos, Z
Vila, A
Becourt, N
Peiro, F
Cornet, A
Chrysanthakopoulos, N
Calamiotou, M
Citation: A. Georgakilas et al., Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substrates, J CRYST GR, 202, 1999, pp. 248-251
Authors:
Georgakilas, A
Tsagaraki, K
Harteros, K
Hatzopoulos, Z
Vila, A
Becourt, N
Peiro, F
Cornet, A
Chrysanthakopoulos, N
Calamiotou, M
Citation: A. Georgakilas et al., Correlation between the sign of strain and the surface morphology and defect structure of InAlAs grown on vicinal (111)BInP, THIN SOL FI, 336(1-2), 1998, pp. 218-221
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1-11
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