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Citation: Ml. O'Steen et al., A study of the effect of V/III flux ratio and substrate temperature on theIn incorporation efficiency in InxGa1-x/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy, MRS I J N S, 5, 2000, pp. NIL_149-NIL_154

Authors: Cho, YH Fedler, F Hauenstein, RJ Park, GH Song, JJ Keller, S Mishra, UK DenBaars, SP

Citation: Yh. Cho et al., High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantumwells: Influence of Si doping concentration, J APPL PHYS, 85(5), 1999, pp. 3006-3008

Authors: O'Steen, ML Fedler, F Hauenstein, RJ

Citation: Ml. O'Steen et al., Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 75(15), 1999, pp. 2280-2282