Authors: Williams, C Xu, Y Adam, R Darula, M Harnack, O Scherbel, J Siegel, M Hegmann, FA Sobolewski, R

Citation: C. Williams et al., Ultrafast YBCO photodetector based on the kinetic-inductive process, IEEE APPL S, 11(1), 2001, pp. 578-581

Authors: Lui, KPH Hegmann, FA

Citation: Kph. Lui et Fa. Hegmann, Ultrafast carrier relaxation in radiation-damaged silicon on sapphire studied by optical-pump-terahertz-probe experiments, APPL PHYS L, 78(22), 2001, pp. 3478-3480

Authors: Hegmann, FA Williams, JB Cole, B Sherwin, MS Beeman, JW Haller, EE

Citation: Fa. Hegmann et al., Time-resolved photoresponse of a gallium-doped germanium photoconductor using a variable pulse-width terahertz source, APPL PHYS L, 76(3), 2000, pp. 262-264

Authors: Jin, I Chen, Z Wu, T Pai, SP Dong, Z Ogale, SB Ramesh, R Venkatesan, T Johnson, M Finley, E Hegmann, FA Freeman, MR

Citation: I. Jin et al., Spin-polarized quasiparticle injection into YBCO, IEEE APPL S, 9(2), 1999, pp. 3640-3643

Authors: Lindgren, M Currie, M Williams, C Hsiang, TY Fauchet, PM Sobolewski, R Moffat, SH Hughes, RA Preston, JS Hegmann, FA

Citation: M. Lindgren et al., Intrinsic picosecond response times of Y-Ba-Cu-O superconducting photodetectors, APPL PHYS L, 74(6), 1999, pp. 853-855