Authors:
Herden, M
Bauer, AJ
Beichele, M
Ryssel, H
Citation: M. Herden et al., Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode, SOL ST ELEC, 45(8), 2001, pp. 1251-1256
Authors:
Beichele, M
Bauer, AJ
Herden, M
Ryssel, H
Citation: M. Beichele et al., Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure in different gas atmospheres, SOL ST ELEC, 45(8), 2001, pp. 1383-1389
Citation: M. Herden et al., Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices, MICROEL REL, 40(4-5), 2000, pp. 633-636
Authors:
Bauer, AJ
Beichele, M
Herden, M
Ryssel, H
Citation: Aj. Bauer et al., Reliability of ultra-thin gate oxides grown in low-pressure N2O ambient oron nitrogen-implanted silicon, MICROEL ENG, 48(1-4), 1999, pp. 59-62