Authors: Stark, T Gutowski, L Herden, M Grunleitner, H Kohler, S Hundhausen, M Ley, L

Citation: T. Stark et al., Ti-silicide formation during isochronal annealing followed by in situ ellipsometry, MICROEL ENG, 55(1-4), 2001, pp. 101-107

Authors: Herden, M Bauer, AJ Beichele, M Ryssel, H

Citation: M. Herden et al., Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode, SOL ST ELEC, 45(8), 2001, pp. 1251-1256

Authors: Beichele, M Bauer, AJ Herden, M Ryssel, H

Citation: M. Beichele et al., Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure in different gas atmospheres, SOL ST ELEC, 45(8), 2001, pp. 1383-1389

Authors: Herden, M Bauer, AJ Ryssel, H

Citation: M. Herden et al., Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices, MICROEL REL, 40(4-5), 2000, pp. 633-636

Authors: Bauer, AJ Beichele, M Herden, M Ryssel, H

Citation: Aj. Bauer et al., Reliability of ultra-thin gate oxides grown in low-pressure N2O ambient oron nitrogen-implanted silicon, MICROEL ENG, 48(1-4), 1999, pp. 59-62