Authors: Hoke, WE Lemonias, PJ Mosca, JJ Lyman, PS Torabi, A Marsh, PF McTaggart, RA Lardizabal, SM Hetzler, K

Citation: We. Hoke et al., Molecular beam epitaxial growth and device performance of metamorphic highelectron mobility transistor structures fabricated on GaAs substrates, J VAC SCI B, 17(3), 1999, pp. 1131-1135