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Citation: D. Yang et al., Programmed rate chemical vapor deposition protocols, J ELCHEM SO, 147(2), 2000, pp. 723-730

Authors: Jonnalagadda, R Yang, D Rogers, BR Hillman, JT Foster, RF Cale, TS

Citation: R. Jonnalagadda et al., Programmed substrate temperature ramping to increase nucleation density and decrease surface roughness during metalorganic chemical vapor deposition of aluminum, J MATER RES, 14(5), 1999, pp. 1982-1989