Authors: Matsuura, S Hitosugi, T Heike, S Kida, A Suwa, Y Onogi, T Watanabe, S Kitazawa, K Hashizume, T

Citation: S. Matsuura et al., Reduced density of missing-dimer vacancies on tungsten-contaminated Si(100)-(2 x n) surface by hydrogen termination, JPN J A P 1, 39(7B), 2000, pp. 4518-4520

Authors: Hashizume, T Heike, S Hitosugi, T Kitazawa, K

Citation: T. Hashizume et al., Application of atom manipulation for fabricating nanoscale and atomic-scale structures on Si surfaces, ADV MATERIA, 2000, pp. 91-112

Authors: Hitosugi, T Suwa, Y Matsuura, S Heike, S Onogi, T Watanabe, S Hasegawa, T Kitazawa, K Hashizume, T

Citation: T. Hitosugi et al., Direct observation of one-dimensional Ga-atom migration on a Si(100)-(2 x 1)-H surface: A local probe of adsorption energy variation, PHYS REV L, 83(20), 1999, pp. 4116-4119

Authors: Hitosugi, T Heike, S Onogi, T Hashizume, T Watanabe, S Li, ZQ Ohno, K Kawazoe, Y Hasegawa, T Kitazawa, K

Citation: T. Hitosugi et al., Jahn-Teller distortion in dangling-bond linear chains fabricated on a hydrogen-terminated Si(100)-2 x 1 surface, PHYS REV L, 82(20), 1999, pp. 4034-4037

Authors: Kajiyama, H Heike, S Hitosugi, T Hashizume, T

Citation: H. Kajiyama et al., Initial backbond oxidation at an unpaired dangling bond site on a hydrogen-terminated Si(100)2x1 surface, JPN J A P 2, 37(11B), 1998, pp. L1350-L1353