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Results: 1-9 |
Results: 9
Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes
Authors: Wang, T Bai, J Sakai, S Ho, JK
Citation: T. Wang et al., Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes, APPL PHYS L, 78(18), 2001, pp. 2617-2619
Electronic structure of oxidized Ni/Au contacts on p-GaN investigated by x-ray absorption spectroscopy
Authors: Jan, JC Asokan, K Chiou, JW Pong, WF Tseng, PK Tsai, MH Chang, YK Chen, YY Lee, JF Wu, JS Lin, HJ Chen, CT Chen, LC Chen, FR Ho, JK
Citation: Jc. Jan et al., Electronic structure of oxidized Ni/Au contacts on p-GaN investigated by x-ray absorption spectroscopy, APPL PHYS L, 78(18), 2001, pp. 2718-2720
Photoluminescence study on threading dislocation in GaN revealed by selective photoelectrochemical etching
Authors: Hsieh, JT Hwang, JM Hwang, HL Ho, JK Huang, CN Chen, CY Hung, WH
Citation: Jt. Hsieh et al., Photoluminescence study on threading dislocation in GaN revealed by selective photoelectrochemical etching, EL SOLID ST, 3(8), 2000, pp. 395-398
Photoenhanced wet oxidation of gallium nitride
Authors: Peng, LH Liao, CH Hsu, YC Jong, CS Huang, CN Ho, JK Chiu, CC Chen, CY
Citation: Lh. Peng et al., Photoenhanced wet oxidation of gallium nitride, APPL PHYS L, 76(4), 2000, pp. 511-513
Oxidized Ni/Pt and Ni/Au ohmic contacts to p-type GaN
Authors: Chen, LC Ho, JK Jong, CS Chiu, CC Shih, KK Chen, FR Kai, JJ Chang, L
Citation: Lc. Chen et al., Oxidized Ni/Pt and Ni/Au ohmic contacts to p-type GaN, APPL PHYS L, 76(25), 2000, pp. 3703-3705
The effect of heat treatment on Ni/Au ohmic contacts to p-type GaN
Authors: Chen, LC Ho, JK Chen, FR Kai, JJ Chang, L Jong, CS Chiu, CC Huang, CN Shih, KK
Citation: Lc. Chen et al., The effect of heat treatment on Ni/Au ohmic contacts to p-type GaN, PHYS ST S-A, 176(1), 1999, pp. 773-777
Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
Authors: Ho, JK Jong, CS Chiu, CC Huang, CN Shih, KK Chen, LC Chen, FR Kai, JJ
Citation: Jk. Ho et al., Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films, J APPL PHYS, 86(8), 1999, pp. 4491-4497
Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN
Authors: Chen, LC Chen, FR Kai, JJ Chang, L Ho, JK Jong, CS Chiu, CC Huang, CN Chen, CY Shih, KK
Citation: Lc. Chen et al., Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN, J APPL PHYS, 86(7), 1999, pp. 3826-3832
Low-resistance ohmic contacts to p-type GaN
Authors: Ho, JK Jong, CS Chiu, CC Huang, CN Chen, CY Shih, KK
Citation: Jk. Ho et al., Low-resistance ohmic contacts to p-type GaN, APPL PHYS L, 74(9), 1999, pp. 1275-1277
Risultati: 1-9 |