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Results:
1-8
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Results: 8
Authors:
Hochbauer, T
Misra, A
Verda, R
Zheng, Y
Lau, SS
Mayer, JW
Nastasi, M
Citation: T. Hochbauer et al., The influence of ion-implantation damage on hydrogen-induced ion-cut, NUCL INST B, 175, 2001, pp. 169-175
Authors:
Zheng, Y
Lau, SS
Hochbauer, T
Misra, A
Verda, R
He, XM
Nastasi, M
Mayer, JW
Citation: Y. Zheng et al., Orientation dependence of blistering in H-implanted Si, J APPL PHYS, 89(5), 2001, pp. 2972-2978
Authors:
Hochbauer, T
Misra, A
Nastasi, M
Mayer, JW
Citation: T. Hochbauer et al., Investigation of the cut location in hydrogen implantation induced siliconsurface layer exfoliation, J APPL PHYS, 89(11), 2001, pp. 5980-5990
Authors:
Hochbauer, T
Misra, A
Verda, R
Nastasi, M
Mayer, JW
Zheng, Y
Lau, SS
Citation: T. Hochbauer et al., Hydrogen-implantation induced silicon surface layer exfoliation, PHIL MAG B, 80(11), 2000, pp. 1921-1931
Authors:
Ensinger, W
Volz, K
Hochbauer, T
Citation: W. Ensinger et al., Plasma immersion ion implantation of complex-shaped objects: an experimental study on the treatment homogeneity, SURF COAT, 128, 2000, pp. 265-269
Authors:
Ensinger, W
Volz, K
Hochbauer, T
Citation: W. Ensinger et al., Three-dimensional dose uniformity of plasma immersion ion implantation shown with the example of macro-trenches, SURF COAT, 121, 1999, pp. 347-352
Authors:
Hochbauer, T
Walter, KC
Schwarz, RB
Nastasi, M
Bower, RW
Ensinger, W
Citation: T. Hochbauer et al., The influence of boron ion implantation on hydrogen blister formation in n-type silicon, J APPL PHYS, 86(8), 1999, pp. 4176-4183
Authors:
Hochbauer, T
Nastasi, M
Mayer, JW
Citation: T. Hochbauer et al., Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon, APPL PHYS L, 75(25), 1999, pp. 3938-3940
Risultati:
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