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Results: 1-3 |
Results: 3

Authors: O'Shea, JJ Camras, MD Wynne, D Hofler, GE
Citation: Jj. O'Shea et al., Evidence for voltage drops at misaligned wafer-bonded interfaces of AlGaInP light-emitting diodes by electrostatic force microscopy, J APPL PHYS, 90(9), 2001, pp. 4791-4795

Authors: Tan, IH Vanderwater, DA Huang, JW Hofler, GE Kish, FA Chen, EI Ostentowski, TD
Citation: Ih. Tan et al., Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers, J ELEC MAT, 29(2), 2000, pp. 188-194

Authors: Krames, MR Ochiai-Holcomb, M Hofler, GE Carter-Coman, C Chen, EI Tan, IH Grillot, P Gardner, NF Chui, HC Huang, JW Stockman, SA Kish, FA Craford, MG Tan, TS Kocot, CP Hueschen, M Posselt, J Loh, B Sasser, G Collins, D
Citation: Mr. Krames et al., High-power truncated-inverted-pyramid (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes exhibiting > 50% external quantum efficiency, APPL PHYS L, 75(16), 1999, pp. 2365-2367
Risultati: 1-3 |