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Results:
1-7
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Results: 7
Authors:
Friedland, KJ
Riedel, A
Kostial, H
Horicke, M
Hey, R
Ploog, KH
Citation: Kj. Friedland et al., High mobility electron heterostructure wafer fused onto LiNbO3, J ELEC MAT, 30(7), 2001, pp. 817-820
Authors:
Wassermeier, M
Hey, R
Horicke, M
Wiebicke, E
Citation: M. Wassermeier et al., Regrowth and annealing of In0.22Ga0.78As and GaAs quantum well graded-index separate confinement heterostructure lasers, SEMIC SCI T, 16(8), 2001, pp. L40-L43
Authors:
Moreno, M
Alonso, M
Horicke, M
Hey, R
Horn, K
Sacedon, JL
Ploog, KH
Citation: M. Moreno et al., Photoemission results on intralayer insertion at III-V/III-V junctions: A critical appraisal of the different interpretations, J VAC SCI B, 18(4), 2000, pp. 2128-2138
Authors:
Moreno, M
Alonso, M
Sacedon, JL
Horicke, M
Hey, R
Horn, K
Ploog, KH
Citation: M. Moreno et al., Si and Be intralayers at GaAs/AlAs and GaAs/GaAs junctions: Low-temperature photoemission measurements, PHYS REV B, 61(23), 2000, pp. 16060-16067
Authors:
Wassermeier, M
Hey, R
Horicke, M
Wiebicke, E
Kostial, H
Citation: M. Wassermeier et al., Analysis of buried (Al,Ga)As interfaces after molecular-beam epitaxy overgrowth, J VAC SCI B, 17(4), 1999, pp. 1791-1794
Authors:
Hey, R
Wassermeier, M
Horicke, M
Wiebicke, E
Kostial, H
Citation: R. Hey et al., Minimizing interface contamination in MBE overgrowth, J CRYST GR, 202, 1999, pp. 582-585
Authors:
Moreno, M
Sacedon, JL
Alonso, M
Horicke, M
Hey, R
Avila, J
Asensio, MC
Horn, K
Ploog, KH
Citation: M. Moreno et al., Si and Be intralayers at GaAs/AlAs heterojunctions: Doping effects, PHYS REV B, 58(20), 1998, pp. 13767-13777
Risultati:
1-7
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