Authors: Goorsky, MS Sandhu, R Hsing, R Naidenkova, M Wojtowicz, M Chin, TP Block, TR Streit, DC

Citation: Ms. Goorsky et al., Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers, J VAC SCI B, 18(3), 2000, pp. 1658-1662