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Results:
1-7
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Results: 7
Authors:
Al-Shareef, HN
Bersuker, G
Lim, C
Murto, R
Borthakur, S
Brown, GA
Huff, HR
Citation: Hn. Al-shareef et al., Plasma nitridation of very thin gate dielectrics, MICROEL ENG, 59(1-4), 2001, pp. 317-322
Authors:
Feuersanger, AE
Huff, HR
Citation: Ae. Feuersanger et Hr. Huff, Gunter Schwuttke - Obituary, PHYS TODAY, 54(4), 2001, pp. 86
Authors:
Al-Shareef, HN
Karamcheti, A
Luo, TY
Bersuker, G
Brown, GA
Murto, RW
Jackson, MD
Huff, HR
Kraus, P
Lopes, D
Olsen, C
Miner, G
Citation: Hn. Al-shareef et al., Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation, APPL PHYS L, 78(24), 2001, pp. 3875-3877
Authors:
Luo, TY
Laughery, M
Brown, GA
Al-Shareef, HN
Watt, VHC
Karamcheti, A
Jackson, MD
Huff, HR
Citation: Ty. Luo et al., Effect of H-2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO2, IEEE ELEC D, 21(9), 2000, pp. 430-432
Authors:
Huff, HR
Citation: Hr. Huff, A re-examination of silicon wafer specifications, SOL ST TECH, 43(10), 2000, pp. 210
Authors:
Shih, S
Au, C
Yang, Z
Messina, T
Goodall, RK
Huff, HR
Citation: S. Shih et al., Characterization of 300 mm silicon-polished and EPI wafers, MICROEL ENG, 45(2-3), 1999, pp. 169-182
Authors:
Ono, T
Rozgonyi, GA
Au, C
Messina, T
Goodall, RK
Huff, HR
Citation: T. Ono et al., Oxygen precipitation behavior in 300 mm polished Czochralski silicon wafers, J ELCHEM SO, 146(10), 1999, pp. 3807-3811
Risultati:
1-7
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