Authors: Erbert, G Beister, G Hulsewede, R Knauer, A Pittroff, W Sebastian, J Wenzel, H Weyers, M Trankle, G

Citation: G. Erbert et al., High-power highly reliable Al-free 940-nm diode lasers, IEEE S T QU, 7(2), 2001, pp. 143-148

Authors: Sebastian, J Beister, G Bugge, F Buhrandt, F Erbert, G Hansel, HG Hulsewede, R Knauer, A Pittroff, W Staske, R Schroder, M Wenzel, H Weyers, M Trankle, G

Citation: J. Sebastian et al., High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence, IEEE S T QU, 7(2), 2001, pp. 334-339

Authors: Hulsewede, R Sebastian, J Wenzel, H Beister, G Knauer, A Erbert, G

Citation: R. Hulsewede et al., Beam quality of high power 800 nm broad-area laser diodes with 1 and 2 mu m large optical cavity structures, OPT COMMUN, 192(1-2), 2001, pp. 69-75

Authors: Wenzel, H Bugge, F Erbert, G Hulsewede, R Staske, R Trankle, G

Citation: H. Wenzel et al., High-power diode lasers with small vertical beam divergence emitting at 808 nm, ELECTR LETT, 37(16), 2001, pp. 1024-1026