AAAAAA
Results:
1-8
|
Results: 8
Authors:
Lai, YH
Yeh, CT
Hwang, JM
Hwang, HL
Chen, CT
Hung, WH
Citation: Yh. Lai et al., Sputtering and etching of GaN surfaces, J PHYS CH B, 105(41), 2001, pp. 10029-10036
Authors:
Lay, TS
Hong, M
Kwo, J
Mannaerts, JP
Hung, WH
Huang, DJ
Citation: Ts. Lay et al., Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces, SOL ST ELEC, 45(9), 2001, pp. 1679-1682
Authors:
Lay, TS
Huang, KH
Hung, WH
Hong, M
Kwo, J
Mannaerts, JP
Citation: Ts. Lay et al., Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy, SOL ST ELEC, 45(3), 2001, pp. 423-426
Authors:
Hsieh, JT
Hwang, JM
Hwang, HL
Ho, JK
Huang, CN
Chen, CY
Hung, WH
Citation: Jt. Hsieh et al., Photoluminescence study on threading dislocation in GaN revealed by selective photoelectrochemical etching, EL SOLID ST, 3(8), 2000, pp. 395-398
Authors:
Hwang, JM
Hsieh, JT
Hwang, HL
Hung, WH
Citation: Jm. Hwang et al., A damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN, MRS I J N S, 5, 2000, pp. NIL_751-NIL_756
Authors:
Hwang, JM
Hsieh, JT
Ko, CY
Hwang, HL
Hung, WH
Citation: Jm. Hwang et al., Photoelectrochemical etching of InxGa1-xN, APPL PHYS L, 76(26), 2000, pp. 3917-3919
Authors:
Hung, WH
Chen, HC
Chang, CC
Hsieh, JT
Hwang, HL
Citation: Wh. Hung et al., Adsorption and decomposition of H2S on InP(100), J PHYS CH B, 103(18), 1999, pp. 3663-3668
Authors:
Hung, WH
Hsieh, JT
Hwang, HL
Hwang, HY
Chang, CC
Citation: Wh. Hung et al., Surface etching of InP(100) by chlorine, SURF SCI, 418(1), 1998, pp. 46-54
Risultati:
1-8
|