Authors: PORTIER X IHLAL A RIZK R

Citation: X. Portier et al., IRON SILICIDE FORMATION BY PRECIPITATION IN A SILICON BICRYSTAL, Physica status solidi. a, Applied research, 161(1), 1997, pp. 75-84

Authors: IHLAL A RIZK R

Citation: A. Ihlal et R. Rizk, EFFECTS OF IRON CONTAMINATION ON THE ELECTRICAL-ACTIVITY OF A SILICONBICRYSTAL, Journal of physics. D, Applied physics, 29(12), 1996, pp. 3096-3100

Authors: IHLAL A RIZK R DUPARC OBMH

Citation: A. Ihlal et al., CORRELATION BETWEEN THE GETTERING EFFICIENCIES AND THE ENERGIES INTERFACES IN SILICON BICRYSTALS, Journal of applied physics, 80(5), 1996, pp. 2665-2670

Authors: IHLAL A RIZK R VOIVENEL P NOUET G

Citation: A. Ihlal et al., A COMPARATIVE-STUDY OF THE EBIC CONTRAST AND GETTERING EFFICIENCY OF THE TILT BOUNDARIES SIGMA=25, SIGMA=13 AND SIGMA=9 IN SILICON BICRYSTALS, Journal de physique. III, 5(9), 1995, pp. 1371-1382

Authors: RIZK R IHLAL A PORTIER X

Citation: R. Rizk et al., EVOLUTION OF ELECTRICAL-ACTIVITY AND STRUCTURE OF NICKEL PRECIPITATESWITH THE TREATMENT TEMPERATURE OF A SIGMA=25 SILICON BICRYSTAL, Journal of applied physics, 77(5), 1995, pp. 1875-1880

Authors: IHLAL A NOUET G

Citation: A. Ihlal et G. Nouet, EBIC AND TEM ANALYSIS OF THE ELECTRICAL-ACTIVITY OF SIGMA = 25 AND SIGMA = 13 SILICON BICRYSTALS AFTER THERMAL TREATMENTS, Physica status solidi. a, Applied research, 141(1), 1994, pp. 81-92