Citation: M. Ohkubo et al., EMITTER MATERIAL COMPARISON BETWEEN INGAP AND INGAASP IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS, JPN J A P 2, 33(7B), 1994, pp. 120000993-120000995
Citation: T. Ijichi et al., HIGH-POWER 0.98-MU-M STRAINED-LAYER QUANTUM-WELL LASERS WITH INGAP CLADDING, Microwave and optical technology letters, 7(3), 1994, pp. 139-143
Authors:
OHKUBO M
NAMIKI S
IJICHI T
IKETANI A
KIKUTA T
Citation: M. Ohkubo et al., 0.98-MU-M INGAAS-INGAASP-INGAP GRIN-SCH SL-SQW LASERS FOR COUPLING HIGH OPTICAL POWER INTO SINGLE-MODE FIBER, IEEE journal of quantum electronics, 29(6), 1993, pp. 1932-1935